제조업체 | 부품명 | 데이터시트 | 상세설명 |
VBsemi Electronics Co.,... |
VB4290
|
686Kb/9P
|
Dual P-Channel 20 V (D-S) MOSFET
|
VB4290
|
712Kb/9P
|
Dual P-Channel 20 V (D-S) MOSFET
|
VB4290A
|
767Kb/9P
|
Dual P-Channel 20 V (D-S) MOSFET
|
VB4290
|
712Kb/9P
|
Dual P-Channel 20 V (D-S) MOSFET
|
Search Partnumber :
Start with "VB42" -
Total : 78 ( 1/4 Page) |
VBsemi Electronics Co.,... |
VB4290
|
686Kb/9P |
Dual P-Channel 20 V (D-S) MOSFET
|
VB4290
|
712Kb/9P |
Dual P-Channel 20 V (D-S) MOSFET
|
VB4290A
|
767Kb/9P |
Dual P-Channel 20 V (D-S) MOSFET
|
VB4290
|
712Kb/9P |
Dual P-Channel 20 V (D-S) MOSFET
|
New Jersey Semi-Conduct... |
VB40
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
Extech Instruments Corp... |
VB400
|
500Kb/1P |
Pen Vibration Meter
|
Vishay Siliconix |
VB40100C
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB40100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
Revision: 26-May-08 |
VB40100C-E3
|
160Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 14-Nov-14 |
VB40100C-E3
|
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 14-Nov-14 |
VB40100C-E3
|
1Mb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB40100C-E3/4W
|
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier
Revision: 19-Oct-11 |
VB40100C-E3/4W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
Revision: 26-May-08 |
VB40100C-E3/8W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
Revision: 26-May-08 |
VB40100C-E3/8W
|
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier
Revision: 19-Oct-11 |
VB40100C-M3
|
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
Revision: 03-Jan-17 |