VB6ME 데이터시트, PDF

	VB6ME	VB6
일치하는	No Data	No Data
시작하는	No Data	VB6(27) VB60(21) VB68*(6)
끝나는	No Data	VB6(19) 0VB6(7) 2VB6(2) BVB6(4) EVB6(3) FVB6(2) *LVB6(1)
포함하는	No Data	VB6(170) VB60(3) VB64(11)

제조업체

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	VB60100C	149Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Jan-08
	VB60100C	150Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 19-May-08
	VB60100C	142Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 16-Aug-13
	VB60100C	104Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	VB60100C-E3/4W	149Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Jan-08
	VB60100C-E3/4W	150Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 19-May-08
	VB60100C-E3/4W	146Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09
	VB60100C-E3/8W	149Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Jan-08
	VB60100C-E3/8W	150Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 19-May-08
	VB60100C-E3/8W	146Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09
	VB60100C-M3	88Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 15-May-13
	VB60100C-M3	78Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 15-May-13
	VB60120C	134Kb/5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 17-Aug-15
	VB60120C	156Kb/5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	VB60120C-E3-4W	141Kb/5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A Revision: 17-Aug-15
	VB60120C-E3-8W	141Kb/5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A Revision: 17-Aug-15
	VB60170G	87Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 11-Jul-12
	VB60170G-E3	95Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 11-Sep-13
	VB60170G-E3	106Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	VB60170G-E3	84Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 11-Sep-13

VB6ME 판매업체

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VB6ME 데이터시트, PDF

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