제조업체 | 부품명 | 데이터시트 | 상세설명 |
NEC |
AA1A4P
|
125Kb/2P |
NPN SILICON TRANSISTOR
|
AA1A4Z
|
82Kb/4P |
COMPOUND TRANSISTOR
|
Renesas Technology Corp |
AA1A4Z
|
237Kb/6P |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
April 1st, 2010 |
NEC |
AA1A3Q
|
83Kb/4P |
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
Renesas Technology Corp |
AA1A3Q
|
237Kb/6P |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
April 1st, 2010 |
Carling Technologies |
AA1-B0-34-615-1B1
|
3Mb/28P |
CIRUIT BREAKER
|
Microsemi Corporation |
AA100
|
128Kb/3P |
SCRs .5 A, Planar
|
List of Unclassifed Man... |
AA100
|
129Kb/3P |
Maximum Gate Trigger Current 2,20 or 200uA
|
New Jersey Semi-Conduct... |
AA100
|
145Kb/2P |
SCRs .5A, Planar
|
Alpha Industries |
AA100-59
|
38Kb/2P |
GaAs IC 3 Bit Digital Attenuator 4 dB LSB Positive Control 0.75-2 GHz
|
Skyworks Solutions Inc. |
AA100-59LF
|
187Kb/4P |
GaAs 3 Bit Digital Attenuator, 4 dB LSB 0.75-2 GHz
|
List of Unclassifed Man... |
AA100-AA104
|
129Kb/3P |
Maximum Gate Trigger Current 2,20 or 200uA
|
Dubilier |
AA1000
|
95Kb/1P |
ALKALINE
|
Vishay Barry |
AA1000-10-3X
|
563Kb/1P |
ALUMINUM NITRIDE
Rev.A 08/31/06 |
AA1000-100-12X
|
122Kb/1P |
Aluminum Nitride 10 dB FLANGED ATTENUATOR
Rev. C |
AA1000-100-13X
|
129Kb/1P |
Aluminum Nitride 10 dB FLANGED ATTENUATOR
Rev. C |
AA1000-20-3X
|
578Kb/1P |
Aluminum Nitride
03/29/07 |
AA1000-40-3X
|
167Kb/1P |
Aluminum Nitride 10 dB FLANGED ATTENUATOR
Revision Date 11/5/07 |
AA1000-50-1X
|
111Kb/1P |
Aluminum Nitride FLANGED ATTENUATOR
Revision Date 11/10/10 |
AA1000-75-1X
|
196Kb/1P |
Aluminum Nitride 10 dB FLANGED ATTENUATOR
Revision Date 8/30/07 |