| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Advanced Power Electron... |
AP01L60J-H
|
59Kb/4P |
100% Avalanche Rated, Fast Switching Speed
|
|
AP01L60J-HF
|
107Kb/5P |
Fast Switching Characteristics
|
|
AP01L60J-HF
|
96Kb/4P |
100% Avalanche Test, Fast Switching Characteristics
|
|
AP01L60J
|
104Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01L60AT
|
55Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01L60AT
|
111Kb/5P |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
|
AP01L60H
|
63Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
VBsemi Electronics Co.,... |
AP01L60H
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
Advanced Power Electron... |
AP01L60H-H
|
59Kb/4P |
100% Avalanche Rated, Fast Switching Speed
|
VBsemi Electronics Co.,... |
AP01L60H-H-HF
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
|
AP01L60H-HF
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP01L60H-HF
|
759Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP01L60H-HF
|
107Kb/5P |
Fast Switching Characteristics
|
|
AP01L60H-HF
|
96Kb/4P |
100% Avalanche Test, Fast Switching Characteristics
|
|
AP01L60H-HF
|
96Kb/4P |
Fast Switching Characteristics
|
|
AP01L60H-HF
|
107Kb/5P |
Fast Switching Characteristics
|
|
AP01L60H-H
|
59Kb/4P |
Fast Switching Speed
|
|
AP01L60H
|
104Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01L60P
|
89Kb/6P |
N-CHANNEL ENHANCEMENT MODE
|
|
AP01L60T
|
73Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
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