제조업체 | 부품명 | 데이터시트 | 상세설명 |
Advanced Power Electron... |
AP9997BGHJ-HF
|
128Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP9997BGH-HF
|
102Kb/5P |
Simple Drive Requirement
|
AP9997BGJ-HF
|
102Kb/5P |
Simple Drive Requirement
|
SHENZHEN DOINGTER SEMIC... |
AP9997BGJ-HF
|
781Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP9997AGH-HF
|
99Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP9997AGH-HF
|
99Kb/4P |
Simple Drive Requirement
|
AP9997AGH-HF
|
54Kb/5P |
Simple Drive Requirement
|
Inchange Semiconductor ... |
AP9997GH
|
330Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Electron... |
AP9997GH-HF
|
102Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP9997GH-HF
|
105Kb/5P |
Simple Drive Requirement
|
VBsemi Electronics Co.,... |
AP9997GH-HF
|
1,010Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP9997GH-HF
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP9997GH-HF
|
102Kb/4P |
Simple Drive Requirement
|
AP9997GH-HF
|
105Kb/5P |
Simple Drive Requirement
|
SHENZHEN DOINGTER SEMIC... |
AP9997GJ-HF
|
618Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP9997GJ-HF
|
105Kb/5P |
Simple Drive Requirement
|
AP9997GJ-HF
|
102Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP9997GJ-HF
|
102Kb/4P |
Simple Drive Requirement
|
AP9997GK
|
100Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
VBsemi Electronics Co.,... |
AP9997GK
|
977Kb/6P |
N-Channel 100-V (D-S) MOSFET
|