제조업체 | 부품명 | 데이터시트 | 상세설명 |
ATMEL Corporation |
ATC18M
|
115Kb/8P |
0.18 關m CMOS Cell-based ASIC for Military Use
|
ATC18RHA
|
268Kb/20P |
Rad. Hard 0.18 Um CMOS Cell-based ASIC for Space Use
|
ATC18RHA
|
187Kb/22P |
Rad. Hard 0.18 關m CMOS Cell-based ASIC for Space Use
|
ATC18RHA
|
187Kb/22P |
Rad. Hard 0.18 關m CMOS Cell-based ASIC for Space Use
|
ATC18RHA
|
164Kb/16P |
Comprehensive Library of Standard Logic and I/O Cells
|
ATC18
|
219Kb/12P |
Cell-based ASIC
|
List of Unclassifed Man... |
ATC100A
|
275Kb/6P |
Ultra-Stable Performance
|
RF Micro Devices |
ATC100A0R2BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
ATC100A0R2BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
NXP Semiconductors |
ATC100A0R5BT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
RF Micro Devices |
ATC100A0R7BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
ATC100A0R7BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
NXP Semiconductors |
ATC100A100JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
List of Unclassifed Man... |
ATC100A100JW150XI
|
275Kb/6P |
Ultra-Stable Performance
|
ATC100A100JW150XT
|
275Kb/6P |
Ultra-Stable Performance
|
ATC100A100JW150XTV
|
275Kb/6P |
Ultra-Stable Performance
|
NXP Semiconductors |
ATC100A101JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
RF Micro Devices |
ATC100A120JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
ATC100A150JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
NXP Semiconductors |
ATC100A220GT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |