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Hello, Please ask a question about M28S-C Datasheet
# Example questions:
➢ What is the operating junction temperature range for this transistor?
➢ What are the different hfe ranges available, and which rank corresponds to an hfe between 500 and 700?
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# M28S Transistor - Datasheet Summary
## General Information
· Type: NPN Silicon Plastic-Encapsulate Transistor
· Manufacturer: Micro Commercial Components
· Revision: D, 2013/01/01
## Features
· Power Dissipation: 0.625 Watts
· Collector Current (Ic): 1.0A
· Collector-Base Voltage (Vcbo): 40V
· Operating & Storage Junction Temperature: -55°C to +150°C
· UL 94 V-0 Flammability Rating (Epoxy)
· Moisture Sensitivity Level: 1
· RoHS Compliant: Available with "-P" suffix
· Halogen Free: Available with "-HF" suffix
· Marking: M28S X (e.g., M28S-B, M28S-C, M28S-D)
## Electrical Characteristics (@ 25°C)
· V(BR)CEO (Collector-Emitter Breakdown Voltage): 20 Vdc
· V(BR)CBO (Collector-Base Breakdown Voltage): 40 Vdc
· V(BR)EBO (Emitter-Base Breakdown Voltage): 6.0 Vdc
· ICBO (Collector Cutoff Current): ≤ 1.0 uAdc
· ICEO (Collector Cutoff Current): ≤ 5.0 Vdc
· IEBO (Emitter Cutoff Current): ≤ 0.1 uAdc
· hFE (DC Current Gain):
- 290 - 1000 (Ic = 1.0mAdc, Vce = 1.0Vdc)
- 300 - 1000 (Ic = 100mAdc, Vce = 1.0Vdc)
- 300 - 1000 (Ic = 300mAdc, Vce = 1.0Vdc)
- 300 - 1000 (Ic = 500mAdc, Vce = 1.0Vdc)
· Vce(sat) (Collector-Emitter Saturation Voltage): ≤ 0.55 Vdc (Ic = 600mAdc, Ib = 30mAdc)
· fT (Transition Frequency): 100 MHz (Vce = 10Vdc, Ic = 50mAdc, f = 30MHz)
## HFE Classification
| Rank | B | C | D |
|---|---|---|---|
| Range | 300-550 | 500-700 | 650-1000 |
| Dimension | Inches (Min) | Inches (Max) | Millimeters (Min) | Millimeters (Max) |
|---|---|---|---|---|
| A | 0.175 | 0.185 | 4.45 | 4.70 |
| B | 0.175 | 0.185 | 4.45 | 4.70 |
| C | 0.500 | - | 12.70 | - |
| D | 0.016 | 0.020 | 0.41 | 0.63 |
| E | 0.135 | 0.145 | 3.43 | 3.68 |
| G (Straight Lead) | 0.095 | 0.105 | 2.42 | 2.67 |
| G (Bent Lead) | 0.173 | 0.220 | 4.40 | 5.60 |
# M28S Transistor - Datasheet Summary
## General Information
· Type: NPN Silicon Plastic-Encapsulate Transistor
· Manufacturer: Micro Commercial Components
· Revision: D, 2013/01/01
## Features
· Power Dissipation: 0.625 Watts
· Collector Current (Ic): 1.0A
· Collector-Base Voltage (Vcbo): 40V
· Operating & Storage Junction Temperature: -55°C to +150°C
· UL 94 V-0 Flammability Rating (Epoxy)
· Moisture Sensitivity Level: 1
· RoHS Compliant: Available with "-P" suffix
· Halogen Free: Available with "-HF" suffix
· Marking: M28S X (e.g., M28S-B, M28S-C, M28S-D)
## Electrical Characteristics (@ 25°C)
· V(BR)CEO (Collector-Emitter Breakdown Voltage): 20 Vdc
· V(BR)CBO (Collector-Base Breakdown Voltage): 40 Vdc
· V(BR)EBO (Emitter-Base Breakdown Voltage): 6.0 Vdc
· ICBO (Collector Cutoff Current): ≤ 1.0 uAdc
· ICEO (Collector Cutoff Current): ≤ 5.0 Vdc
· IEBO (Emitter Cutoff Current): ≤ 0.1 uAdc
· hFE (DC Current Gain):
- 290 - 1000 (Ic = 1.0mAdc, Vce = 1.0Vdc)
- 300 - 1000 (Ic = 100mAdc, Vce = 1.0Vdc)
- 300 - 1000 (Ic = 300mAdc, Vce = 1.0Vdc)
- 300 - 1000 (Ic = 500mAdc, Vce = 1.0Vdc)
· Vce(sat) (Collector-Emitter Saturation Voltage): ≤ 0.55 Vdc (Ic = 600mAdc, Ib = 30mAdc)
· fT (Transition Frequency): 100 MHz (Vce = 10Vdc, Ic = 50mAdc, f = 30MHz)
## HFE Classification
| Rank | B | C | D |
|---|---|---|---|
| Range | 300-550 | 500-700 | 650-1000 |
| Dimension | Inches (Min) | Inches (Max) | Millimeters (Min) | Millimeters (Max) |
|---|---|---|---|---|
| A | 0.175 | 0.185 | 4.45 | 4.70 |
| B | 0.175 | 0.185 | 4.45 | 4.70 |
| C | 0.500 | - | 12.70 | - |
| D | 0.016 | 0.020 | 0.41 | 0.63 |
| E | 0.135 | 0.145 | 3.43 | 3.68 |
| G (Straight Lead) | 0.095 | 0.105 | 2.42 | 2.67 |
| G (Bent Lead) | 0.173 | 0.220 | 4.40 | 5.60 |
| Part No. | M28S-C |
| Manufacturer | MCC |
| Size | 251 Kbytes |
| Pages | 2 pages |
| Description | NPN Silicon Plastic-Encapsulate Transistor |
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