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2STW1695 Datasheet with Chat AI
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  • Part No.2STW1695
    ManufacturerSTMICROELECTRONICS
    Size192 Kbytes
    Pages9 pages
    DescriptionHigh power PNP epitaxial planar bipolar transistor
    Datasheet Summary with AI

    This document is a datasheet for the STMicroelectronics 2STW1695 NPN power transistor. Here's a summary of the key information:

    Device Type: NPN Power Transistor

    Key Features & Specifications:

    ️· Maximum Collector Current (IC): Capable of handling high currents (up to 7A in some test conditions).
    ️· Collector-Emitter Voltage (VCEO): -140V.
    ️· Power Dissipation: Optimized for use with a heatsink.
    ️· hFE (DC Current Gain): Typically between 70 and 140, depending on the collector current.
    ️· Transition Frequency (fT): 20 MHz.
    ️· Saturation Voltage (VCE(sat)): Relatively low, indicating efficient switching.
    ️· Package: TO-247 (a three-lead package designed for power applications and heat dissipation).
    ️· ECOPACK: The device is available in an environmentally friendly, lead-free package.

    Applications:

    ️· Suitable for a wide range of power amplification and switching applications, including:
    - Audio Amplifiers
    - Switching Regulators

    - Motor Control
    - High-speed switching applications

    Datasheet Contents:

    ️· Electrical Characteristics: Detailed tables of the transistor's key performance parameters.
    ️· Graphs & Curves: Illustrations of characteristics like safe operating area, output characteristics, DC current gain, and saturation voltage.
    ️· Package Dimensions: Mechanical drawings of the TO-247 package.
    ️· Revision History: Records of changes made to the datasheet over time.
    ️· Important Disclaimer: Includes standard legal disclaimers regarding the use of the product.

    Overall: This datasheet provides comprehensive information for engineers designing power circuits using the 2STW1695 transistor. It's a relatively high-performance, robust device suitable for various power applications.

    Device Type: NPN Power Transistor

    Key Features & Specifications:

    ️· Maximum Collector Current (IC): Capable of handling high currents (up to 7A in some test conditions).
    ️· Collector-Emitter Voltage (VCEO): -140V.
    ️· Power Dissipation: Optimized for use with a heatsink.
    ️· hFE (DC Current Gain): Typically between 70 and 140, depending on the collector current.
    ️· Transition Frequency (fT): 20 MHz.
    ️· Saturation Voltage (VCE(sat)): Relatively low, indicating efficient switching.
    ️· Package: TO-247 (a three-lead package designed for power applications and heat dissipation).
    ️· ECOPACK: The device is available in an environmentally friendly, lead-free package.

    Applications:

    ️· Suitable for a wide range of power amplification and switching applications, including:
    - Audio Amplifiers
    - Switching Regulators
    - Motor Control
    - High-speed switching applications

    Datasheet Contents:

    ️· Electrical Characteristics: Detailed tables of the transistor's key performance parameters.
    ️· Graphs & Curves: Illustrations of characteristics like safe operating area, output characteristics, DC current gain, and saturation voltage.
    ️· Package Dimensions: Mechanical drawings of the TO-247 package.
    ️· Revision History: Records of changes made to the datasheet over time.
    ️· Important Disclaimer: Includes standard legal disclaimers regarding the use of the product.

    Overall: This datasheet provides comprehensive information for engineers designing power circuits using the 2STW1695 transistor. It's a relatively high-performance, robust device suitable for various power applications.

    Part No.2STW1695
    ManufacturerSTMICROELECTRONICS
    Size192 Kbytes
    Pages9 pages
    DescriptionHigh power PNP epitaxial planar bipolar transistor
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