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Hello, Please ask a question about US2A_07 Datasheet
# Example questions:
➢ How does the repetitive peak reverse voltage differ between the us2a and us2m diodes?
➢ What is the typical forward voltage drop for the us2g diode when carrying a forward current of 2a?
➢ What is the maximum allowable junction temperature for all listed diode types?
| Part No. | US2A_07 |
| Manufacturer | DIOTEC |
| Size | 69 Kbytes |
| Pages | 2 pages |
| Description | Ultrafast Switching Surface Mount Si-Diodes |
# US2A - US2M Ultrafast Switching Si-Diodes
## General Information
️· Type: Ultrafast switching surface mount silicon diodes
️· Nominal Current: 2 A
️· Repetitive Peak Reverse Voltage: 50 – 1000 V
️· Case: Plastic case (~SMB, ~DO-214AA)
️· Weight: Approx. 0.1 g
️· Material: UL classification 94V-0 plastic material
️· Packaging: Standard packaging taped and reeled
## Maximum Ratings
️· Repetitive Peak Reverse Voltage (V<sub>RRM</sub>): 50 V (US2A), 100 V (US2B), 200 V (US2D), 400 V (US2G), 600 V (US2J), 800 V (US2K), 1000 V (US2M)
️· Surge Peak Reverse Voltage (V<sub>RSM</sub>): Same values as V<sub>RRM</sub>
️· Max. Average Forward Rectified Current (I<sub>FAV</sub>): 2 A (T = 100°C)
️· Repetitive Peak Forward Current (I<sub>FRM</sub>): 10 A (f > 15 Hz)
️· Peak Forward Surge Current (I<sub>FSM</sub>): 50 A (TA = 25°C)
️· Rating for Fusing (i<sup>2</sup>t): 12.5 A·s (t < 10 ms, TA = 25°C)
️· Junction Temperature (T<sub>j</sub>): -50°C to +150°C
️· Storage Temperature (T<sub>S</sub>): -50°C to +150°C
️· Max. Terminal Temperature: 100°C
## Characteristics
️· Reverse Recovery Time (t<sub>rr</sub>): < 50 ns (US2A-D), < 50 ns (US2G), < 75 ns (US2J-M)
️· Forward Voltage (V<sub>F</sub>):
- < 1.0 V at 2A (US2A-D)
- < 1.25 V at 2A (US2G)
- < 1.7 V at 2A (US2J-M)
️· Leakage Current (I<sub>R</sub>):
- < 10 µA at T<sub>j</sub> = 25°C, V<sub>R</sub> = V<sub>RRM</sub>
- < 200 µA at T<sub>j</sub> = 100°C, V<sub>R</sub> = V<sub>RRM</sub>
️· Thermal Resistance:
- R<sub>thA</sub> (junction to ambient air): < 50 K/W
- R<sub>thL</sub> (junction to terminal): < 15 K/W
# US2A - US2M Ultrafast Switching Si-Diodes
## General Information
️· Type: Ultrafast switching surface mount silicon diodes
️· Nominal Current: 2 A
️· Repetitive Peak Reverse Voltage: 50 – 1000 V
️· Case: Plastic case (~SMB, ~DO-214AA)
️· Weight: Approx. 0.1 g
️· Material: UL classification 94V-0 plastic material
️· Packaging: Standard packaging taped and reeled
## Maximum Ratings
️· Repetitive Peak Reverse Voltage (V<sub>RRM</sub>): 50 V (US2A), 100 V (US2B), 200 V (US2D), 400 V (US2G), 600 V (US2J), 800 V (US2K), 1000 V (US2M)
️· Surge Peak Reverse Voltage (V<sub>RSM</sub>): Same values as V<sub>RRM</sub>
️· Max. Average Forward Rectified Current (I<sub>FAV</sub>): 2 A (T = 100°C)
️· Repetitive Peak Forward Current (I<sub>FRM</sub>): 10 A (f > 15 Hz)
️· Peak Forward Surge Current (I<sub>FSM</sub>): 50 A (TA = 25°C)
️· Rating for Fusing (i<sup>2</sup>t): 12.5 A·s (t < 10 ms, TA = 25°C)
️· Junction Temperature (T<sub>j</sub>): -50°C to +150°C
️· Storage Temperature (T<sub>S</sub>): -50°C to +150°C
️· Max. Terminal Temperature: 100°C
## Characteristics
️· Reverse Recovery Time (t<sub>rr</sub>): < 50 ns (US2A-D), < 50 ns (US2G), < 75 ns (US2J-M)
️· Forward Voltage (V<sub>F</sub>):
- < 1.0 V at 2A (US2A-D)
- < 1.25 V at 2A (US2G)
- < 1.7 V at 2A (US2J-M)
️· Leakage Current (I<sub>R</sub>):
- < 10 µA at T<sub>j</sub> = 25°C, V<sub>R</sub> = V<sub>RRM</sub>
- < 200 µA at T<sub>j</sub> = 100°C, V<sub>R</sub> = V<sub>RRM</sub>
️· Thermal Resistance:
- R<sub>thA</sub> (junction to ambient air): < 50 K/W
- R<sub>thL</sub> (junction to terminal): < 15 K/W
| Part No. | US2A_07 |
| Manufacturer | DIOTEC |
| Size | 69 Kbytes |
| Pages | 2 pages |
| Description | Ultrafast Switching Surface Mount Si-Diodes |
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