# 2SC4177W Silicon Epitaxial Planar Transistor

## Features

· Excellent hFE linearity.
· High voltage and current capability.
· Complementary to 2SA1611.
· Small SOT-323 package.

## Applications

· Audio frequency general purpose amplifiers.

## Ordering Information

Type No.	Marking	Package Code

| 2SC4177W | L4/L5/L6/L7 | SOT-323

## Maximum Ratings (@ Ta=25℃)

Parameter	Value	Unit
VCBO (Collector-Base Voltage)	60	V
VCEO (Collector-Emitter Voltage)	50	V
VEBO (Emitter-Base Voltage)	5	V
IC (Collector Current)	100	mA
PC (Collector Dissipation)	150	mW
Tj, Tstg (Junction/Storage Temperature)	-55 to 150	℃

## Electrical Characteristics (@ Ta=25℃)

Parameter	Test Conditions	Min	Typ	Max	Unit
V(BR)CBO (Collector-Base Breakdown Voltage)	IC=100μA, IE=0	60			V
V(BR)CEO (Collector-Emitter Breakdown Voltage)	IC=1mA, IB=0	50			V
V(BR)EBO (Emitter-Base Breakdown Voltage)	IE=100μA, IC=0	5			V
ICBO (Collector Cut-off Current)	VCB=60V, IE=0			0.1	μA
IEBO (Emitter Cut-off Current)	VEB=5V, IC=0			0.1	μA
hFE (DC Current Gain)	VCE=6V, IC=1mA	90	200	600
VCE(sat) (Collector-Emitter Saturation Voltage)	IC=100mA, IB=10mA		0.15	0.3	V
VBE(sat) (Base-Emitter Saturation Voltage)	IC=100mA, IB=10mA		0.86	1.0	V
fT (Transition Frequency)	VCE=6V, IE=-10mA		250		MHz
Cob (Collector Output Capacitance)	VCB=6V, IE=0, f=1MHz		3.0		pF

## hFE Classification

Range	Marking
90-180	L4
135-270	L5
200-400	L6
300-600	L7

## Package Information (SOT-323)

Dimension	Min	Max
A	1.8	2.2
B	1.15	1.35
C	1.0 (Typical)	1.0 (Typical)
D	0.15	0.35
E	0.25	0.40
G	1.2	1.4
H	0.02	0.1
J	0.1 (Typical)	0.1 (Typical)
K	2.1	2.3

*All dimensions in mm*

Device	Package	Shipping
2SC4177W	SOT-323	3000/Tape & Reel