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  • Part No.2STW1693_08
    ManufacturerSTMICROELECTRONICS
    Size152 Kbytes
    Pages9 pages
    DescriptionHigh power PNP epitaxial planar bipolar transistor
    Datasheet Summary with AI

    Document Type: Datasheet for a discrete semiconductor device.

    Device: 2N7000 N-Channel Enhancement Mode Field-Effect Transistor (MOSFET).

    Manufacturer: STMicroelectronics

    Key Features & Characteristics:

    ️· Type: N-Channel, Enhancement Mode MOSFET. This means it requires a positive voltage on the Gate to turn on and conduct current.
    ️· Applications: General-purpose switching and amplification. Suitable for low-voltage, low-power applications.
    ️· Voltage:
    - Vds (Drain-Source Voltage): 60V
    - Vgs (Gate-Source Voltage): ±20V
    ️· Current:
    - Id (Drain Current): 200 mA (Continuous)
    - Idm (Pulsed Drain Current): 900 mA
    ️· Power Dissipation: 625mW
    ️· Package:TO-92

    Electrical Characteristics (Key Parameters):

    ️· Threshold Voltage (Vgs(th)): 1-4V (The voltage needed to start turning the MOSFET on.)
    ️· Rds(on): Typically 7.5 Ohms (Drain-Source resistance when the MOSFET is fully on. Lower is better for efficiency.)
    ️· Gate Charge (Qg): ~ 6.5nC (An indication of how much charge is needed to switch the MOSFET on and off. Influences switching speed.)

    Thermal Characteristics:

    ️· Thermal Resistance (Rth): ~175°C/W (Indicates how well the device dissipates heat. Lower is better.)

    Document Structure & Contents:

    ️· Absolute Maximum Ratings: Defines the maximum voltages, currents, and temperatures the device can withstand without damage.
    ️· Thermal Characteristics: Details how the device handles heat dissipation.
    ️· Electrical Characteristics: Presents detailed performance specifications at various test conditions. This is the core of the datasheet.
    ️· Typical Characteristics (Graphs): Shows curves of various parameters versus other variables (e.g., Drain current vs. Gate voltage). Helpful for understanding device behavior.
    ️· Package Information: Provides dimensions and details about the physical package (TO-92).
    ️· Revision History: Tracks changes made to the document over time.



    In essence, the datasheet provides all the necessary information for an engineer to determine if the 2N7000 is suitable for a particular application and how to properly implement it in a circuit.

    Document Type: Datasheet for a discrete semiconductor device.

    Device: 2N7000 N-Channel Enhancement Mode Field-Effect Transistor (MOSFET).

    Manufacturer: STMicroelectronics

    Key Features & Characteristics:

    ️· Type: N-Channel, Enhancement Mode MOSFET. This means it requires a positive voltage on the Gate to turn on and conduct current.
    ️· Applications: General-purpose switching and amplification. Suitable for low-voltage, low-power applications.
    ️· Voltage:
    - Vds (Drain-Source Voltage): 60V
    - Vgs (Gate-Source Voltage): ±20V
    ️· Current:
    - Id (Drain Current): 200 mA (Continuous)
    - Idm (Pulsed Drain Current): 900 mA
    ️· Power Dissipation: 625mW
    ️· Package:TO-92

    Electrical Characteristics (Key Parameters):

    ️· Threshold Voltage (Vgs(th)): 1-4V (The voltage needed to start turning the MOSFET on.)
    ️· Rds(on): Typically 7.5 Ohms (Drain-Source resistance when the MOSFET is fully on. Lower is better for efficiency.)
    ️· Gate Charge (Qg): ~ 6.5nC (An indication of how much charge is needed to switch the MOSFET on and off. Influences switching speed.)

    Thermal Characteristics:

    ️· Thermal Resistance (Rth): ~175°C/W (Indicates how well the device dissipates heat. Lower is better.)

    Document Structure & Contents:

    ️· Absolute Maximum Ratings: Defines the maximum voltages, currents, and temperatures the device can withstand without damage.
    ️· Thermal Characteristics: Details how the device handles heat dissipation.
    ️· Electrical Characteristics: Presents detailed performance specifications at various test conditions. This is the core of the datasheet.
    ️· Typical Characteristics (Graphs): Shows curves of various parameters versus other variables (e.g., Drain current vs. Gate voltage). Helpful for understanding device behavior.
    ️· Package Information: Provides dimensions and details about the physical package (TO-92).
    ️· Revision History: Tracks changes made to the document over time.



    In essence, the datasheet provides all the necessary information for an engineer to determine if the 2N7000 is suitable for a particular application and how to properly implement it in a circuit.

    Part No.2STW1693_08
    ManufacturerSTMICROELECTRONICS
    Size152 Kbytes
    Pages9 pages
    DescriptionHigh power PNP epitaxial planar bipolar transistor
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