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Hello, Please ask a question about 2STW1693_08 Datasheet
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Document Type: Datasheet for a discrete semiconductor device.
Device: 2N7000 N-Channel Enhancement Mode Field-Effect Transistor (MOSFET).
Manufacturer: STMicroelectronics
Key Features & Characteristics:
️· Type: N-Channel, Enhancement Mode MOSFET. This means it requires a positive voltage on the Gate to turn on and conduct current.
️· Applications: General-purpose switching and amplification. Suitable for low-voltage, low-power applications.
️· Voltage:
- Vds (Drain-Source Voltage): 60V
- Vgs (Gate-Source Voltage): ±20V
️· Current:
- Id (Drain Current): 200 mA (Continuous)
- Idm (Pulsed Drain Current): 900 mA
️· Power Dissipation: 625mW
️· Package:TO-92
Electrical Characteristics (Key Parameters):
️· Threshold Voltage (Vgs(th)): 1-4V (The voltage needed to start turning the MOSFET on.)
️· Rds(on): Typically 7.5 Ohms (Drain-Source resistance when the MOSFET is fully on. Lower is better for efficiency.)
️· Gate Charge (Qg): ~ 6.5nC (An indication of how much charge is needed to switch the MOSFET on and off. Influences switching speed.)
Thermal Characteristics:
️· Thermal Resistance (Rth): ~175°C/W (Indicates how well the device dissipates heat. Lower is better.)
Document Structure & Contents:
️· Absolute Maximum Ratings: Defines the maximum voltages, currents, and temperatures the device can withstand without damage.
️· Thermal Characteristics: Details how the device handles heat dissipation.
️· Electrical Characteristics: Presents detailed performance specifications at various test conditions. This is the core of the datasheet.
️· Typical Characteristics (Graphs): Shows curves of various parameters versus other variables (e.g., Drain current vs. Gate voltage). Helpful for understanding device behavior.
️· Package Information: Provides dimensions and details about the physical package (TO-92).
️· Revision History: Tracks changes made to the document over time.
In essence, the datasheet provides all the necessary information for an engineer to determine if the 2N7000 is suitable for a particular application and how to properly implement it in a circuit.
Document Type: Datasheet for a discrete semiconductor device.
Device: 2N7000 N-Channel Enhancement Mode Field-Effect Transistor (MOSFET).
Manufacturer: STMicroelectronics
Key Features & Characteristics:
️· Type: N-Channel, Enhancement Mode MOSFET. This means it requires a positive voltage on the Gate to turn on and conduct current.
️· Applications: General-purpose switching and amplification. Suitable for low-voltage, low-power applications.
️· Voltage:
- Vds (Drain-Source Voltage): 60V
- Vgs (Gate-Source Voltage): ±20V
️· Current:
- Id (Drain Current): 200 mA (Continuous)
- Idm (Pulsed Drain Current): 900 mA
️· Power Dissipation: 625mW
️· Package:TO-92
Electrical Characteristics (Key Parameters):
️· Threshold Voltage (Vgs(th)): 1-4V (The voltage needed to start turning the MOSFET on.)
️· Rds(on): Typically 7.5 Ohms (Drain-Source resistance when the MOSFET is fully on. Lower is better for efficiency.)
️· Gate Charge (Qg): ~ 6.5nC (An indication of how much charge is needed to switch the MOSFET on and off. Influences switching speed.)
Thermal Characteristics:
️· Thermal Resistance (Rth): ~175°C/W (Indicates how well the device dissipates heat. Lower is better.)
Document Structure & Contents:
️· Absolute Maximum Ratings: Defines the maximum voltages, currents, and temperatures the device can withstand without damage.
️· Thermal Characteristics: Details how the device handles heat dissipation.
️· Electrical Characteristics: Presents detailed performance specifications at various test conditions. This is the core of the datasheet.
️· Typical Characteristics (Graphs): Shows curves of various parameters versus other variables (e.g., Drain current vs. Gate voltage). Helpful for understanding device behavior.
️· Package Information: Provides dimensions and details about the physical package (TO-92).
️· Revision History: Tracks changes made to the document over time.
In essence, the datasheet provides all the necessary information for an engineer to determine if the 2N7000 is suitable for a particular application and how to properly implement it in a circuit.
| Part No. | 2STW1693_08 |
| Manufacturer | STMICROELECTRONICS |
| Size | 152 Kbytes |
| Pages | 9 pages |
| Description | High power PNP epitaxial planar bipolar transistor |
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