## Summary of the 2ST9W1695 Datasheet

This document is a datasheet for the STMicroelectronics 2ST9W1695 NPN power transistor, designed for audio amplification, switching, and general-purpose applications. Here’s a breakdown of the key information:

Key Features & Specifications:

️· Type: NPN Power Transistor
️· Voltage: Designed for applications with up to -140V Collector-Emitter breakdown voltage (V(BR)CEO).
️· Current: Handles continuous collector current, with saturation voltages specified for different current levels.
️· Package: TO-247 package for efficient heat dissipation.
️· Frequency: Transition frequency (fT) of 20 MHz, suitable for moderate frequency applications.
️· Thermal Resistance: Junction-to-case thermal resistance of 1.25°C/W

Key Parameters (Typical Values):

️· hFE (DC Current Gain): 70-50 depending on collector current.
️· VCE(sat): -0.5V to -0.7V at specific current and bias levels.
️· VBE: -1.3V
️· Switching speeds: Turn-on time 0.24us, Storage time 1.2us, Fall time 0.24us

Other important features:

️· ECOPACK: Offered in environmentally friendly lead-free packages.
️· Comprehensive Charts & Graphs: Includes detailed graphs for safe operating area, output characteristics, DC current gain, and more.
️· Revision History: Provides a log of changes made to the document.



In essence, this datasheet provides the electrical and thermal characteristics, specifications, and application guidelines for the 2ST9W1695 power transistor. It’s a resource for engineers designing circuits that utilize this transistor, enabling them to ensure proper operation and performance.