# 2SC3736 NPN Silicon Epitaxia Transistor

## Features

· High speed, high voltage switching
· Low collector saturation voltage

## Absolute Maximum Ratings (Ta = 125°C)

· Collector-base voltage (VCBO): 80V
· Collector-emitter voltage (VCEO): 45V
· Emitter-base voltage (VEBO): 5V
· Collector current (IC): 1A
· Collector current (Pulse, ICP): 2A
· Total power dissipation (PT): 2W
· Junction temperature (Tj): 150°C
· Storage temperature (Tstg): -55°C to +150°C

## Electrical Characteristics (Ta = 25°C)

· Collector cutoff current (ICBO): 0.5nA (VCB = 45V, IE = 0)
· Emitter cutoff current (IEBO): 0.5nA (VEB = 4V, IC = 0)
· DC current gain (hFE): 60-200 (VCE = 10V, IC = 50mA)
· Collector-emitter saturation voltage (VCE(sat)): 0.17 - 0.4V (IC = 500mA, IB = 50mA)
· Base-emitter saturation voltage (VBE(sat)): 0.9 - 1.2V (IC = 500mA, IB = 50mA)
· Gain bandwidth product (fT): 300 - 380 MHz (VCE = 10V, IE = -100mA)
· Output capacitance (Cob): 6.7 - 10 pF (VCB = 10V, IE = 0, f = 1.0MHz)
· Turn-on time (ton): 20-40 ns
· Storage time (tstg): 55-80 ns
· Turn-off time (toff): 72-100 ns

## hFE Classification

· Marking: OL or OK
· hFE Ranges:
- 60-120
- 100-200