# 2SC5585 NPN Transistor

## Features
· High current capability.
· Low VCE(sat) of 0.25V at IC = 200mA, IB = 10mA.
· Pb-Free

## Maximum Ratings
· V(BR)CBO (Collector-base breakdown voltage): 15V
· V(BR)CEO (Collector-emitter breakdown voltage): 12V
· V(BR)EBO (Emitter-base breakdown voltage): 6V
· IC (Collector current - Continuous): 500mA
· PC (Collector dissipation): 150mW
· TJ (Junction temperature): 150°C
· Tstg (Storage temperature): -55 to 150°C

## Electrical Characteristics (Tamb=25°C)
· hFE (DC current gain): 270 - 680 (VCE=2V, IC=10mA)
· VCE(sat) (Collector-emitter saturation voltage): 0.25V (IC=200mA, IB=10mA)
· fT (Transition frequency): 320 MHz (VCE=2V, IC=10mA, f=100MHz)

· Cob (Collector output capacitance): 7.5pF (VCB=10V, IE=0, f=1MHz)
· ICBO (Collector cut-off current): 1.00 μA (VCB=15V, IE=0)
· IEBO (Emitter cut-off current): 1.00 μA (VEB=6V, IC=0)

## Package Information
· Package Type: SOT-523 (SC-75)
· Marking: BX
· Dimensions (mm):
- A: 0.30 - 0.50
- B: 0.70 - 0.90
- C: 1.45 - 1.75
- D: 0.50
- E: 0.15 - 0.40
- G: 0.80 - 1.00
- H: 1.40 - 1.80
- J: 0.00 - 0.10
- K: 0.70 - 1.00
- L: 0.37 - 0.48
- M: 0.10 - 0.25