1. General Description & Overview

️· Type: P-Channel JFET (Junction Field-Effect Transistor)
️· Replacement for: Silicon Controlled Rectifier 2N4905
️· Function: Used for switching and amplification applications.
️· Manufacturer: Linear Integrated Systems / Micross Components (Distributor)

2. Absolute Maximum Ratings

️· BVGSS (Gate-Source Breakdown Voltage): 30 V
️· VGS(off) (Gate-Source Cutoff Voltage): 3 V to 6 V
️· VDS(on) (Drain-Source On Voltage): 0.5 V to 0.8 V
️· VDS(on) (Drain-Source On Voltage) @ ID = -3mA: 0.7 V
️· IDSS (Drain-Source Saturation Current): -15 mA to -60 mA
️· IGSS (Gate Reverse Current): -0.5 nA to -500 nA
️· IG (Gate Operating Current): -5 mA to -50mA
️· Continuous Power Dissipation: 500 mW
️· Gate Current (IG): -50 mA
️· Gate-to-Drain Voltage (VGDS): 30 V
️· Gate-to-Source Voltage (VGSS): 30 V
️· Operating Temperature: -55°C to +200°C
️· Pulse Test Conditions: PW ≤ 300 µs, Duty Cycle ≤ 3%

3. Electrical Characteristics (Typical @ 25°C)

️· VGS(F) (Gate-Source Forward Voltage): -0.7 V to -1 V (IG = -1 mA, VDS = 0 V)
️· ID(off) (Drain Cutoff Current): -10mA to -500mA (VDS=-15V)
️· rDS(on) (Drain-Source On Resistance): Approximately 100 Ω (ID = -1 mA, VGS = 0 V)

4. Dynamic Electrical Characteristics

️· gfs (Forward Transconductance): 4.5 mS (VDS = -15 V, ID = 1 mA, f = 1 kHz)
️· gos (Output Conductance): 20 µS
️· Ciss (Input Capacitance): 20-25 pF (VDS = -15 V, VGS = 0 V, f = 1 MHz)
️· Crss (Reverse Transfer Capacitance): 5-7 pF (VDS = 0 V, VGS = 7 V, f = 1 MHz)
️· en (Equivalent Noise Voltage): 20 nV/√Hz (VDG = 10 V, ID = 10 mA, f = 1 kHz)

5. Switching Characteristics

️· td(on) (Turn-On Time): 10 ns (VGS(L) = -7 V, VGS(H) = 0 V)
️· tr (Turn-On Rise Time): 20 ns
️· td(off) (Turn-Off Time): 8 ns
️· tf (Turn-Off Fall Time): 30 ns

6. Test Circuit Parameters (for Switching Times)

️· VDD: -6 V
️· VGG: 12 V
️· RL: 910 Ω
️· RG: 220 Ω
️· ID(on): -7 mA

Key Takeaways and Considerations

️· P-Channel: It's a P-channel device, meaning the voltage polarities are inverted compared to an N-channel device.
️· Low On-Resistance: It has a relatively low on-resistance (rDS(on)), making it suitable for switching applications.
️· Switching Speed: The datasheet provides switching characteristics, enabling designers to evaluate its performance in high-speed circuits.
️· Datasheet Notes: Pay close attention to the notes regarding pulse test conditions and the limitations of these ratings.