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Hello, Please ask a question about LS832_PDIP Datasheet
# Example questions:
➢ What is the maximum drift voltage (vgs1-2/t) over temperature?
➢ What is the input capacitance (ciss) of the ls832 at vds = 10v, vgs = 0v, and a frequency of 1 mhz?
➢ What is the typical drain current (idss) when vds = 10v and vgs = 0v?
1. Description
️· The LS832 is a dual N-channel JFET (Junction Field-Effect Transistor). It's designed for applications requiring low noise and high linearity. It's part of the Micross Components product line.
2. Key Features
️· Low Noise: Optimized for low noise applications.
️· High Linearity: Good linearity performance.
️· Matched Characteristics: The dual JFETs are matched, referring to parameters like gate-gate voltage and drain-drain leakage. This is crucial for balanced circuits.
️· Wide Operating Range: Operates across a wide range of temperatures (specified as -55°C to +125°C for some characteristics).
️· Common Mode Rejection: Good common-mode rejection, important for differential applications.
3. Electrical Characteristics (Most Important Values)
️· Breakdown Voltages:
- BVGSS (Gate-Source Breakdown): 40-60V
- BVGGO (Gate-to-Gate Breakdown): 40V
️· Transconductance (Yf): Typically 70-500 µmhos (depending on conditions – VDS, VGS, frequency)
️· Drain Current (IDSS): 0.5 - 10 mA (depending on VDS and VGS)
️· Pinchoff Voltage (VGS(off)): 0.6 - 4.5 V
️· Gate Voltage (VGS(on)): Maximum 4V
️· Gate Leakage Current (IG): Very low – up to 0.2 pA (at full conduction)
️· Input Capacitance (CISS): 3 pF
️· Reverse Transfer Capacitance (CRSS): 1.5 pF
️· Drain-to-Drain Capacitance (CDD): 0.1 pF
️· Noise Figure (NF): Approximately 1 dB. Equivalent Noise Voltage (en) approximately 20nV/√Hz.
️· Common-Mode Rejection (CMR): 90 dB (at specified conditions)
️· Matching: Parameters like VGS1-2/VDS and IDSS are tightly matched between the two JFETs. Mismatch is specified as a percentage.
4. Package and Contact Information
️· Available Packages: PDIP (Plastic Dual In-line Package), SOIC (Small Outline Integrated Circuit), and as bare die.
️· Contact:
- Micross Components: Phone: +44 1603 788967, Email: chipcomponents@micross.com, Website: http://www.micross.com/distribution
- Linear Integrated Systems: (Note: Datasheet mentions Linear Integrated Systems as the original manufacturer).
Important Notes
️· Conditions: Many of the electrical characteristics are specified under particular test conditions (e.g., VDS, VGS, temperature, frequency). Always check the "Conditions" column in the datasheet tables.
️· Matching: The matching characteristics are crucial for balanced or differential applications to minimize errors.
️· Bare Die: The availability of the LS832 as a bare die indicates it's suitable for custom circuit designs and applications.
1. Description
️· The LS832 is a dual N-channel JFET (Junction Field-Effect Transistor). It's designed for applications requiring low noise and high linearity. It's part of the Micross Components product line.
2. Key Features
️· Low Noise: Optimized for low noise applications.
️· High Linearity: Good linearity performance.
️· Matched Characteristics: The dual JFETs are matched, referring to parameters like gate-gate voltage and drain-drain leakage. This is crucial for balanced circuits.
️· Wide Operating Range: Operates across a wide range of temperatures (specified as -55°C to +125°C for some characteristics).
️· Common Mode Rejection: Good common-mode rejection, important for differential applications.
3. Electrical Characteristics (Most Important Values)
️· Breakdown Voltages:
- BVGSS (Gate-Source Breakdown): 40-60V
- BVGGO (Gate-to-Gate Breakdown): 40V
️· Transconductance (Yf): Typically 70-500 µmhos (depending on conditions – VDS, VGS, frequency)
️· Drain Current (IDSS): 0.5 - 10 mA (depending on VDS and VGS)
️· Pinchoff Voltage (VGS(off)): 0.6 - 4.5 V
️· Gate Voltage (VGS(on)): Maximum 4V
️· Gate Leakage Current (IG): Very low – up to 0.2 pA (at full conduction)
️· Input Capacitance (CISS): 3 pF
️· Reverse Transfer Capacitance (CRSS): 1.5 pF
️· Drain-to-Drain Capacitance (CDD): 0.1 pF
️· Noise Figure (NF): Approximately 1 dB. Equivalent Noise Voltage (en) approximately 20nV/√Hz.
️· Common-Mode Rejection (CMR): 90 dB (at specified conditions)
️· Matching: Parameters like VGS1-2/VDS and IDSS are tightly matched between the two JFETs. Mismatch is specified as a percentage.
4. Package and Contact Information
️· Available Packages: PDIP (Plastic Dual In-line Package), SOIC (Small Outline Integrated Circuit), and as bare die.
️· Contact:
- Micross Components: Phone: +44 1603 788967, Email: chipcomponents@micross.com, Website: http://www.micross.com/distribution
- Linear Integrated Systems: (Note: Datasheet mentions Linear Integrated Systems as the original manufacturer).
Important Notes
️· Conditions: Many of the electrical characteristics are specified under particular test conditions (e.g., VDS, VGS, temperature, frequency). Always check the "Conditions" column in the datasheet tables.
️· Matching: The matching characteristics are crucial for balanced or differential applications to minimize errors.
️· Bare Die: The availability of the LS832 as a bare die indicates it's suitable for custom circuit designs and applications.
| Part No. | LS832_PDIP |
| Manufacturer | MICROSS |
| Size | 284 Kbytes |
| Pages | 1 page |
| Description | MONOLITHIC DUAL N-CHANNEL JFET |
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