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LS832_PDIP Datasheet with Chat AI
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  • Part No.LS832_PDIP
    ManufacturerMICROSS
    Size284 Kbytes
    Pages1 page
    DescriptionMONOLITHIC DUAL N-CHANNEL JFET
    Datasheet Summary with AI

    1. Description

    ️· The LS832 is a dual N-channel JFET (Junction Field-Effect Transistor). It's designed for applications requiring low noise and high linearity. It's part of the Micross Components product line.

    2. Key Features

    ️· Low Noise: Optimized for low noise applications.
    ️· High Linearity: Good linearity performance.
    ️· Matched Characteristics: The dual JFETs are matched, referring to parameters like gate-gate voltage and drain-drain leakage. This is crucial for balanced circuits.
    ️· Wide Operating Range: Operates across a wide range of temperatures (specified as -55°C to +125°C for some characteristics).
    ️· Common Mode Rejection: Good common-mode rejection, important for differential applications.

    3. Electrical Characteristics (Most Important Values)

    ️· Breakdown Voltages:
    - BVGSS (Gate-Source Breakdown): 40-60V
    - BVGGO (Gate-to-Gate Breakdown): 40V
    ️· Transconductance (Yf): Typically 70-500 µmhos (depending on conditions – VDS, VGS, frequency)
    ️· Drain Current (IDSS): 0.5 - 10 mA (depending on VDS and VGS)
    ️· Pinchoff Voltage (VGS(off)): 0.6 - 4.5 V
    ️· Gate Voltage (VGS(on)): Maximum 4V
    ️· Gate Leakage Current (IG): Very low – up to 0.2 pA (at full conduction)
    ️· Input Capacitance (CISS): 3 pF
    ️· Reverse Transfer Capacitance (CRSS): 1.5 pF
    ️· Drain-to-Drain Capacitance (CDD): 0.1 pF
    ️· Noise Figure (NF): Approximately 1 dB. Equivalent Noise Voltage (en) approximately 20nV/√Hz.
    ️· Common-Mode Rejection (CMR): 90 dB (at specified conditions)
    ️· Matching: Parameters like VGS1-2/VDS and IDSS are tightly matched between the two JFETs. Mismatch is specified as a percentage.

    4. Package and Contact Information

    ️· Available Packages: PDIP (Plastic Dual In-line Package), SOIC (Small Outline Integrated Circuit), and as bare die.
    ️· Contact:
    - Micross Components: Phone: +44 1603 788967, Email: chipcomponents@micross.com, Website: http://www.micross.com/distribution
    - Linear Integrated Systems: (Note: Datasheet mentions Linear Integrated Systems as the original manufacturer).

    Important Notes

    ️· Conditions: Many of the electrical characteristics are specified under particular test conditions (e.g., VDS, VGS, temperature, frequency). Always check the "Conditions" column in the datasheet tables.
    ️· Matching: The matching characteristics are crucial for balanced or differential applications to minimize errors.
    ️· Bare Die: The availability of the LS832 as a bare die indicates it's suitable for custom circuit designs and applications.

    1. Description

    ️· The LS832 is a dual N-channel JFET (Junction Field-Effect Transistor). It's designed for applications requiring low noise and high linearity. It's part of the Micross Components product line.

    2. Key Features

    ️· Low Noise: Optimized for low noise applications.
    ️· High Linearity: Good linearity performance.
    ️· Matched Characteristics: The dual JFETs are matched, referring to parameters like gate-gate voltage and drain-drain leakage. This is crucial for balanced circuits.
    ️· Wide Operating Range: Operates across a wide range of temperatures (specified as -55°C to +125°C for some characteristics).
    ️· Common Mode Rejection: Good common-mode rejection, important for differential applications.

    3. Electrical Characteristics (Most Important Values)

    ️· Breakdown Voltages:
    - BVGSS (Gate-Source Breakdown): 40-60V
    - BVGGO (Gate-to-Gate Breakdown): 40V
    ️· Transconductance (Yf): Typically 70-500 µmhos (depending on conditions – VDS, VGS, frequency)
    ️· Drain Current (IDSS): 0.5 - 10 mA (depending on VDS and VGS)
    ️· Pinchoff Voltage (VGS(off)): 0.6 - 4.5 V
    ️· Gate Voltage (VGS(on)): Maximum 4V
    ️· Gate Leakage Current (IG): Very low – up to 0.2 pA (at full conduction)
    ️· Input Capacitance (CISS): 3 pF
    ️· Reverse Transfer Capacitance (CRSS): 1.5 pF
    ️· Drain-to-Drain Capacitance (CDD): 0.1 pF
    ️· Noise Figure (NF): Approximately 1 dB. Equivalent Noise Voltage (en) approximately 20nV/√Hz.
    ️· Common-Mode Rejection (CMR): 90 dB (at specified conditions)
    ️· Matching: Parameters like VGS1-2/VDS and IDSS are tightly matched between the two JFETs. Mismatch is specified as a percentage.

    4. Package and Contact Information

    ️· Available Packages: PDIP (Plastic Dual In-line Package), SOIC (Small Outline Integrated Circuit), and as bare die.
    ️· Contact:
    - Micross Components: Phone: +44 1603 788967, Email: chipcomponents@micross.com, Website: http://www.micross.com/distribution
    - Linear Integrated Systems: (Note: Datasheet mentions Linear Integrated Systems as the original manufacturer).

    Important Notes

    ️· Conditions: Many of the electrical characteristics are specified under particular test conditions (e.g., VDS, VGS, temperature, frequency). Always check the "Conditions" column in the datasheet tables.
    ️· Matching: The matching characteristics are crucial for balanced or differential applications to minimize errors.
    ️· Bare Die: The availability of the LS832 as a bare die indicates it's suitable for custom circuit designs and applications.

    Part No.LS832_PDIP
    ManufacturerMICROSS
    Size284 Kbytes
    Pages1 page
    DescriptionMONOLITHIC DUAL N-CHANNEL JFET
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