# Silicon NPN Power Transistors 2N6077 2N6078 2N6079

## Description

· TO-66 package
· Low collector saturation voltage
· High breakdown voltage

## Applications

· Horizontal deflection output stages for TVs and CRTs

## Pinning

· 1: Base
· 2: Emitter
· 3: Collector

## Absolute Maximum Ratings (Ta=℃)

Parameter	2N6077	2N6078	2N6079	Unit
VCBO (Collector-base voltage)	300 V	275 V	375 V	V
VCEO (Collector-emitter voltage)	275 V	250 V	350 V	V
VEBO (Emitter-base voltage)	6 V	N/A	N/A	V
IC (Collector current)	7 A	N/A	N/A	A
PD (Total Power Dissipation)	45 W	N/A	N/A	W
Tj (Junction temperature)	150 ℃	N/A	N/A	℃
Tstg (Storage temperature)	-65~200 ℃	N/A	N/A	℃

## Thermal Characteristics

· Rth j-c (Thermal resistance junction to case): 4.28 ℃/W

## Characteristics (Tj=25℃ unless otherwise specified)

Parameter	2N6077	2N6078	2N6079	Unit
VCEO(SUS) (Collector-emitter sustaining voltage)	275 V	250 V	350 V	V
VCEsat (Collector-emitter saturation voltage)	1.0 V	N/A	N/A	V
VBEsat (Base-emitter saturation voltage)	1.2 V	N/A	N/A	V
ICEO (Collector cut-off current)	2.0 mA	N/A	N/A	mA
ICEX (Collector cut-off current)	0.1 mA @ TC=125℃	N/A	N/A	mA
ICBO (Collector cut-off current)	0.1 mA	N/A	N/A	mA
IEBO (Emitter cut-off current)	1.0 mA	N/A	N/A	mA
hFE (DC current gain)	12-70	N/A	N/A
fT (Transition frequency)	7 MHz	N/A	N/A	MHz

## Package Outline

· Refer to Fig. 2 for outline dimensions