## Summary of the Datasheet: US 3A, 3B, 3D, 3G, 3J, 3K, 3M Series Schottky Barrier Diodes

This datasheet details the specifications for a series of Schottky barrier diodes (US 3A, 3B, 3D, 3G, 3J, 3K, and 3M). Here's a breakdown of the key information:

Key Features:

️· Type: Schottky Barrier Diodes
️· Applications: (Implicitly) Fast switching, rectification, and other applications where low forward voltage drop and fast switching speeds are required.
️· Package: (Not specified, likely surface mount – SMC/DO-214AB)

Electrical Characteristics (Common to all models):

️· Maximum Average Forward Rectified Current (IF(AV)): 3.0A
️· Peak Forward Surge Current (IFSM): 100A
️· Typical Junction Capacitance (CJ): 45pF
️· Typical Thermal Resistance (Rθ(ja)): 25°C/W
️· Storage and Operating Junction Temperature Range: -50°C to +150°C

Differences between Models (Based on Voltage Ratings):

The models differ primarily in their voltage ratings:

Model	VRRM (Max Repetitive Peak Reverse Voltage)	VRMS (Max RMS Voltage)	VDC (Max DC Blocking Voltage)
US 3A	50V	35V	50V
US 3B	100V	70V	100V
US 3D	200V	140V	200V
US 3G	400V	280V	400V
US 3J	600V	420V	600V
US 3K	800V	560V	800V
US 3M	1000V	700V	1000V

Other Key Characteristics (Common to all models):

️· Forward Voltage Drop (VF): 1.0V (US 3A, 3B, 3D) / 1.4V - 1.7V (US 3G, 3J, 3K, 3M)
️· Maximum Reverse Recovery Time (trr): 50ns (US 3A, 3B, 3D) / 75ns (US 3G, 3J, 3K, 3M)
️· Maximum DC Reverse Current (IR): 10µA @ 25°C / 500µA @ 100°C

Notes:

️· The datasheet includes notes on the reverse recovery condition, capacitance measurement, and thermal resistance testing.

Manufacturer: SSE Diode Co., Ltd. ([http://www.sse-diode.com](http://www.sse-diode.com))

In essence, this datasheet provides a comprehensive specification for a range of Schottky diodes designed for various voltage and current requirements.