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HTP6A80H Datasheet with Chat AI
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  • Part No.HTP6A80H
    ManufacturerSEMIHOW
    Size390 Kbytes
    Pages6 pages
    Description3 Quadrants Standard TRIAC
    Datasheet Summary with AI

    1. Absolute Maximum Ratings

    ️· Repetitive Peak Off-State Voltage (VDRM): Not explicitly stated, but is referenced in several characteristics.
    ️· Operating Junction Temperature (Tj): -40°C to +150°C
    ️· Storage Temperature (Ts): -40°C to +150°C

    2. Electrical Characteristics (Tj = 25°C unless otherwise specified)

    ️· Repetitive Peak Off-State Current:
    - At Tj = 25°C: 50A (typical)
    - At Tj = 125°C: 5A (typical)
    ️· Repetitive Peak Reverse Current:
    - At Tj = 25°C: 50A (typical)
    - At Tj = 125°C: 5A (typical)
    ️· Gate Trigger Current (IGT): ≤ 25A (max). The conditions are: VD = 12V, RL = 330Ω, 1+, 1-, 3- are reference points (likely gate, cathode, anode)
    ️· Gate Trigger Voltage (VGT): ≤ 1.5V (max) under the same conditions as IGT
    ️· Non-Trigger Gate Voltage: ≥ 0.2V (min) at VD = 12V, RL = 330Ω, TJ=125°C
    ️· Peak On-State Voltage (VTM): 1.2V - 1.5V (typical) at IT = 8.5A, IG = 20mA
    ️· Critical Rate of Rise of Off-State Voltage (dV/dt): ≥ 200 V/µs at VD = 2/3 VDRM, Tj=125°C
    ️· Holding Current (IH): ≥ 45A at IT = 0.2A

    3. Thermal Characteristics

    ️· Thermal Resistance (Junction to Case): 3.9°C/W
    ️· Thermal Resistance (Junction to Ambient): 58°C/W

    4. Figures/Graphs

    ️· Fig 7: Holding current vs. Junction temperature.
    ️· Fig 8: Thermal Impedance vs. Pulse Time
    ️· Fig 9: Instantaneous On-State Current vs. Instantaneous On-State Voltage

    5. Mechanical Dimensions

    ️· Two dimension diagrams are provided.
    ️· Dimensions are given in millimeters with tolerances.

    6. Additional Notes

    ️· Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% for certain measurements.
    ️· Whole parameter and test condition can not be over absolute maximum ratings.

    Key Takeaways:

    ️· This is a high-current thyristor/SCR or similar device.
    ️· It's designed for relatively high-temperature operation (up to 150°C junction temperature).
    ️· The datasheet provides important parameters for designing circuits using this device, including gate trigger requirements, on-state voltage, and thermal characteristics.
    ️· The graphs are essential for understanding the device's behavior under different conditions.

    1. Absolute Maximum Ratings

    ️· Repetitive Peak Off-State Voltage (VDRM): Not explicitly stated, but is referenced in several characteristics.
    ️· Operating Junction Temperature (Tj): -40°C to +150°C
    ️· Storage Temperature (Ts): -40°C to +150°C

    2. Electrical Characteristics (Tj = 25°C unless otherwise specified)

    ️· Repetitive Peak Off-State Current:
    - At Tj = 25°C: 50A (typical)
    - At Tj = 125°C: 5A (typical)
    ️· Repetitive Peak Reverse Current:
    - At Tj = 25°C: 50A (typical)
    - At Tj = 125°C: 5A (typical)
    ️· Gate Trigger Current (IGT): ≤ 25A (max). The conditions are: VD = 12V, RL = 330Ω, 1+, 1-, 3- are reference points (likely gate, cathode, anode)
    ️· Gate Trigger Voltage (VGT): ≤ 1.5V (max) under the same conditions as IGT
    ️· Non-Trigger Gate Voltage: ≥ 0.2V (min) at VD = 12V, RL = 330Ω, TJ=125°C
    ️· Peak On-State Voltage (VTM): 1.2V - 1.5V (typical) at IT = 8.5A, IG = 20mA
    ️· Critical Rate of Rise of Off-State Voltage (dV/dt): ≥ 200 V/µs at VD = 2/3 VDRM, Tj=125°C
    ️· Holding Current (IH): ≥ 45A at IT = 0.2A

    3. Thermal Characteristics

    ️· Thermal Resistance (Junction to Case): 3.9°C/W
    ️· Thermal Resistance (Junction to Ambient): 58°C/W

    4. Figures/Graphs

    ️· Fig 7: Holding current vs. Junction temperature.
    ️· Fig 8: Thermal Impedance vs. Pulse Time
    ️· Fig 9: Instantaneous On-State Current vs. Instantaneous On-State Voltage

    5. Mechanical Dimensions

    ️· Two dimension diagrams are provided.
    ️· Dimensions are given in millimeters with tolerances.

    6. Additional Notes

    ️· Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% for certain measurements.
    ️· Whole parameter and test condition can not be over absolute maximum ratings.

    Key Takeaways:

    ️· This is a high-current thyristor/SCR or similar device.
    ️· It's designed for relatively high-temperature operation (up to 150°C junction temperature).
    ️· The datasheet provides important parameters for designing circuits using this device, including gate trigger requirements, on-state voltage, and thermal characteristics.
    ️· The graphs are essential for understanding the device's behavior under different conditions.

    Part No.HTP6A80H
    ManufacturerSEMIHOW
    Size390 Kbytes
    Pages6 pages
    Description3 Quadrants Standard TRIAC
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