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Hello, Please ask a question about HTP6A80H Datasheet
# Example questions:
➢ What is the maximum thermal resistance from junction to case?
➢ What is the typical holding current value, as indicated in the electrical characteristics table?
➢ What is the peak on-state voltage value when the forward current (it) is 8.5a and the gate current (ig) is 20ma?
1. Absolute Maximum Ratings
️· Repetitive Peak Off-State Voltage (VDRM): Not explicitly stated, but is referenced in several characteristics.
️· Operating Junction Temperature (Tj): -40°C to +150°C
️· Storage Temperature (Ts): -40°C to +150°C
2. Electrical Characteristics (Tj = 25°C unless otherwise specified)
️· Repetitive Peak Off-State Current:
- At Tj = 25°C: 50A (typical)
- At Tj = 125°C: 5A (typical)
️· Repetitive Peak Reverse Current:
- At Tj = 25°C: 50A (typical)
- At Tj = 125°C: 5A (typical)
️· Gate Trigger Current (IGT): ≤ 25A (max). The conditions are: VD = 12V, RL = 330Ω, 1+, 1-, 3- are reference points (likely gate, cathode, anode)
️· Gate Trigger Voltage (VGT): ≤ 1.5V (max) under the same conditions as IGT
️· Non-Trigger Gate Voltage: ≥ 0.2V (min) at VD = 12V, RL = 330Ω, TJ=125°C
️· Peak On-State Voltage (VTM): 1.2V - 1.5V (typical) at IT = 8.5A, IG = 20mA
️· Critical Rate of Rise of Off-State Voltage (dV/dt): ≥ 200 V/µs at VD = 2/3 VDRM, Tj=125°C
️· Holding Current (IH): ≥ 45A at IT = 0.2A
3. Thermal Characteristics
️· Thermal Resistance (Junction to Case): 3.9°C/W
️· Thermal Resistance (Junction to Ambient): 58°C/W
4. Figures/Graphs
️· Fig 7: Holding current vs. Junction temperature.
️· Fig 8: Thermal Impedance vs. Pulse Time
️· Fig 9: Instantaneous On-State Current vs. Instantaneous On-State Voltage
5. Mechanical Dimensions
️· Two dimension diagrams are provided.
️· Dimensions are given in millimeters with tolerances.
6. Additional Notes
️· Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% for certain measurements.
️· Whole parameter and test condition can not be over absolute maximum ratings.
Key Takeaways:
️· This is a high-current thyristor/SCR or similar device.
️· It's designed for relatively high-temperature operation (up to 150°C junction temperature).
️· The datasheet provides important parameters for designing circuits using this device, including gate trigger requirements, on-state voltage, and thermal characteristics.
️· The graphs are essential for understanding the device's behavior under different conditions.
1. Absolute Maximum Ratings
️· Repetitive Peak Off-State Voltage (VDRM): Not explicitly stated, but is referenced in several characteristics.
️· Operating Junction Temperature (Tj): -40°C to +150°C
️· Storage Temperature (Ts): -40°C to +150°C
2. Electrical Characteristics (Tj = 25°C unless otherwise specified)
️· Repetitive Peak Off-State Current:
- At Tj = 25°C: 50A (typical)
- At Tj = 125°C: 5A (typical)
️· Repetitive Peak Reverse Current:
- At Tj = 25°C: 50A (typical)
- At Tj = 125°C: 5A (typical)
️· Gate Trigger Current (IGT): ≤ 25A (max). The conditions are: VD = 12V, RL = 330Ω, 1+, 1-, 3- are reference points (likely gate, cathode, anode)
️· Gate Trigger Voltage (VGT): ≤ 1.5V (max) under the same conditions as IGT
️· Non-Trigger Gate Voltage: ≥ 0.2V (min) at VD = 12V, RL = 330Ω, TJ=125°C
️· Peak On-State Voltage (VTM): 1.2V - 1.5V (typical) at IT = 8.5A, IG = 20mA
️· Critical Rate of Rise of Off-State Voltage (dV/dt): ≥ 200 V/µs at VD = 2/3 VDRM, Tj=125°C
️· Holding Current (IH): ≥ 45A at IT = 0.2A
3. Thermal Characteristics
️· Thermal Resistance (Junction to Case): 3.9°C/W
️· Thermal Resistance (Junction to Ambient): 58°C/W
4. Figures/Graphs
️· Fig 7: Holding current vs. Junction temperature.
️· Fig 8: Thermal Impedance vs. Pulse Time
️· Fig 9: Instantaneous On-State Current vs. Instantaneous On-State Voltage
5. Mechanical Dimensions
️· Two dimension diagrams are provided.
️· Dimensions are given in millimeters with tolerances.
6. Additional Notes
️· Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% for certain measurements.
️· Whole parameter and test condition can not be over absolute maximum ratings.
Key Takeaways:
️· This is a high-current thyristor/SCR or similar device.
️· It's designed for relatively high-temperature operation (up to 150°C junction temperature).
️· The datasheet provides important parameters for designing circuits using this device, including gate trigger requirements, on-state voltage, and thermal characteristics.
️· The graphs are essential for understanding the device's behavior under different conditions.
| Part No. | HTP6A80H |
| Manufacturer | SEMIHOW |
| Size | 390 Kbytes |
| Pages | 6 pages |
| Description | 3 Quadrants Standard TRIAC |
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