# N-Channel JFET High Frequency Amplifier (2N5484 – 2N5486)

## Features

️· Up to 400MHz Operation
️· Economy Packaging
️· C rss <1.0pF

## Absolute Maximum Ratings (TA = 25°C)

️· Drain-Gate Voltage: 25V
️· Source-Gate Voltage: 15V
️· Drain Current: 30mA
️· Forward Gate Current: 10mA
️· Storage Temperature Range: -65°C to +150°C
️· Operating Temperature Range: -55°C to +135°C
️· Lead Temperature (Soldering, 10sec): +300°C
️· Power Dissipation: 310mW (Derate to 2.82mW/°C above 25°C)

## Ordering Information

️· 2N5484-86: Plastic TO-92, -55°C to +135°C
️· X2N5484-86: Sorted chips in Carriers, -55°C to +135°C

## Electrical Characteristics (TA = 25°C)

️· IGSS (Gate Reverse Current): -1.0 nA (VGS = -20V, VDS = 0)
️· BVGSS (Gate-Source Breakdown Voltage): -25V (IG = -1µA, VDS = 0)
️· VGS(off) (Gate-Source Cutoff Voltage): -0.3V to -6.0V (VDS = 15V, ID = 10nA)
️· IDSS (Saturation Drain Current): 1.0mA to 20mA
️· gfs (Common-Source Forward Transconductance): 3000µS to 8000µS
️· gos (Common-Source Output Conductance): 50 to 75
️· Ciss (Common-Source Input Capacitance): 5.0pF
️· Crss (Common-Source Reverse Transfer Capacitance): 1.0
️· Coss (Common-Source Output Capacitance): 2.0
️· Noise Figure: 2.5 dB to 4.0 dB
️· Common-Source Power Gain: 16 to 30

Notes:

️· Pulse test required.
️· Certain characteristics are for design reference only and not 100% tested.