| 제조업체 | 부품명 | 데이터시트 | 상세설명 |

Fairchild Semiconductor
|
RHRP30120 |
908Kb/5P |
30 A, 1200 V, Hyperfast Diode |
| FSV330AF |
112Kb/5P |
Low Forward Voltage Drop: 0.5 V Maximum at 3 A |
| SSN1N45BTA |
722Kb/8P |
N-Channel B-FET 450 V, 0.5 A, 4.25 廓 |
| FSV240AF |
114Kb/5P |
Low Forward Voltage Drop: 0.5 V Maximum at 2 A |
| FGA30N65SMD |
337Kb/10P |
650 V, 30 A Field Stop IGBT |
| FDY102PZ |
209Kb/7P |
Single P-Channel (??.5 V) Specified PowerTrench짰 MOSFET ??0 V, ??.83 A, 0.5 |
| FDMS7608S |
386Kb/12P |
Dual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 m Ohm Q2: 30 V, 30 A, 6.3 m Ohm |
| FGA3060ADF |
1Mb/9P |
600 V, 30 A Field Stop Trench IGBT |
| FDML7610S |
476Kb/12P |
Dual N-Channel PowerTrench짰 MOSFET N-Channel: 30 V, 30 A, 7.5 m廓 N-Channel: 30 V, 28 A, 4.2 m廓 |
| FDMS7600AS |
470Kb/12P |
Dual N-Channel PowerTrench짰 MOSFET N-Channel: 30 V, 30 A, 7.5 m廓 N-Channel: 30 V, 40 A, 2.8 m廓 |
| FDMS7700S |
471Kb/12P |
Dual N-Channel PowerTrench짰 MOSFET N-Channel: 30 V, 30 A, 7.5 m廓 N-Channel: 30 V, 40 A, 2.4 m廓 |
| FDFME3N311ZT |
355Kb/8P |
Integrated N-Channel PowerTrench짰 MOSFET and Schottky Diode 30 V, 1.6 A, 299 m廓 |
| FDMC7208S |
464Kb/12P |
Dual N-Channel PowerTrench짰 MOSFET Q1: 30 V, 12 A, 9.0 m廓 Q2: 30 V, 16 A, 6.4 m廓 |
| FDMS7620S |
364Kb/12P |
Dual N-Channel PowerTrench짰 MOSFET Q1: 30 V, 10.1 A, 20.0 m廓 Q2: 30 V, 12.4 A, 11.2 m廓 |
| FDMS7606 |
379Kb/11P |
Dual N-Channel PowerTrench짰 MOSFET Q1: 30 V, 12 A, 11.4 m廓 Q2: 30 V, 22 A, 11.6 m廓 |
| FDMC7208S |
447Kb/12P |
Dual N-Channel PowerTrench짰 MOSFET Q1: 30 V, 12 A, 9.0 m廓 Q2: 30 V, 16 A, 6.4 m廓 |
| MC78M05CDTX |
297Kb/9P |
3-Terminal 0.5 A Positive Voltage Regulator |
| FDMC7664 |
251Kb/7P |
N-Channel PowerTrench짰 MOSFET 30 V, 18.8 A, 4.2 m |
| FDMS6673BZ |
283Kb/7P |
P-Channel PowerTrench짰 MOSFET -30 V, -28 A, 6.8 m? |
| FDMC7680 |
213Kb/7P |
N-Channel Power Trench짰 MOSFET 30 V, 14.8 A, 7.2 m |