| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Leshan Radio Company
|
LPB3408LT1G |
525Kb/5P |
30V P-Channel (D-S) MOSFET VDS = -30V |
| S-LP3407LT1G |
476Kb/6P |
30V P-Channel Enhancement-Mode MOSFET VDS = -30V |
| LN2306ELT1G |
715Kb/5P |
N-Channel 30V(D-S) MOSFET VDS= 30V |
| LP3401ALT1G |
852Kb/3P |
P-Channel 30V( D - S) MOSFET VDS =-30V |
| LN3424DT2AG |
1Mb/6P |
30V N-Channel Enhancement MOSFET |
| LP3419DT2AG |
142Kb/3P |
30V P-Channel Power MOSFET |
| LN3420DT2AG |
745Kb/6P |
30V N-Channel Enhancement MOSFET |
| S-LN3424DT2AG |
806Kb/6P |
30V N-Channel Enhancement MOSFET |
| LP3407BLT1G |
1,009Kb/3P |
30V P-Channel Enhancement-Mode MOSFET |
| LPB3407LT1G |
731Kb/6P |
30V P-Channel Enhancement-Mode MOSFET |
| LN2506DT1G |
1Mb/5P |
30V N-Channel Enhancement-Mode MOSFET |
| LNA2306LT1G |
438Kb/5P |
30V N-Channel Enhancement-Mode MOSFET |
| LP2305LT1G |
248Kb/4P |
30V P-Channel Enhancement-Mode MOSFET |
| LN2306LT1G |
825Kb/4P |
30V N-Channel Enhancement-Mode MOSFET |
| LN4812LT1G |
292Kb/4P |
30V N-Channel Enhancement-Mode MOSFET |
| LPA2305LT1G |
623Kb/4P |
30V P-Channel Enhancement-Mode MOSFET |
| LP3407LT1G |
1,003Kb/6P |
30V P-Channel Enhancement-Mode MOSFET |
| LP9435LT1G |
416Kb/4P |
30V P-Channel Enhancement-Mode MOSFET |
| LN3410DT2AG |
791Kb/5P |
N-Channel 30V (D-S) MOSFET |
| LP8104DT1AG |
414Kb/5P |
30V P-Channel (D-S) MOSFET |
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