| 제조업체 | 부품명 | 데이터시트 | 상세설명 |

SeCoS Halbleitertechnol...
|
BC808 |
820Kb/3P |
-0.8A , -30V PNP Plastic Encapsulated Transistor |
| 2SC5345 |
704Kb/2P |
0.02A , 30V NPN Plastic Encapsulated Transistor |
| 2SD596 |
327Kb/3P |
0.7A , 30V NPN Plastic Encapsulated Transistor |
| KSA928ATL |
242Kb/2P |
-2A , -30V PNP Plastic Encapsulated Transistor |
| KSC2328AL |
404Kb/2P |
2A , 30V NPN Plastic Encapsulated Transistor |
| SCS230D |
103Kb/2P |
0.2A , 30V Surface Mount Schottky Barrier Rectifiers |
| SSF7401 |
360Kb/4P |
-30V , -2A P-Ch Enhancement Mode MOSFET |
| BAT54X |
231Kb/2P |
0.2A , 30V Surface Mount Schottky Barrier Diode |
| SCS751LV-40 |
208Kb/2P |
30V , 30mA Surface Mount Schottky Barrier Rectifiers |
| MDL301K |
360Kb/2P |
30V Hot-Carrier Detector Schottky Barrier Diode |
| BAT54DW |
184Kb/2P |
0.2A, 30V Surface Mount Schottky Barrier Diode |
| SCS521DZ |
230Kb/2P |
0.1A , 30V Surface Mount Schottky Barrier Rectifiers |
| MDL301 |
411Kb/2P |
30V Hot-Carrier Detector Schottky Barrier Diode |
| MDL301K |
359Kb/2P |
30V Hot-Carrier Detector Schottky Barrier Diode |
| SMG2330N |
70Kb/2P |
5.2A, 30V, RDS(ON) 32m N-Channel Enhancement MOSFET |
| STT6602 |
2Mb/7P |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET |
| SMG2334NE |
297Kb/4P |
3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET |
| SSE110N03-03P |
81Kb/2P |
110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET |
| SMG5409 |
1Mb/4P |
-2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET |
| STT6802 |
1Mb/4P |
3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET |