5-BIT ADJUSTABLE HIGH EFFICIENCY SYNCHRONOUS Datasheet(PDF) - AM417

제조업체	부품명	데이터시트	상세설명
WOLFSPEED, INC.	AM417	270Kb/18P	Ratiometric instrumentation amplifier with adjustable output stage July 2008 Rev 3.1
	AMS4711	539Kb/8P	Miniaturized pressure transmitter with 0 .. 5 V output March 2015 Rev. 4.0
	AMS3011	511Kb/8P	Miniaturized pressure transmitter with 0 .. 5 V output April 2016 Rev. 1.0
	CMPA0527005F	1Mb/12P	5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT Rev. 2.0, 2022-8-26
	C4D05120A	1Mb/9P	4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode Rev. 4, March 2023
	C6D05170H	2Mb/8P	6th Generation 1700 V, 5 A Silicon Carbide Schottky Diode Rev. 0, November 2022
	WSGPA01	712Kb/7P	10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier Rev. 02.1, 2021-07-13
	CAB760M12HM3	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	CAB760M12HM3R	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	CAS480M12HM3	1Mb/11P	1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2022-02-25
	PTRA082808NF	677Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
	PTVA101K02EV	511Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 04, 2023-07-07
	PTVA127002EV	691Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Rev. 05, 2023-07-10
	PXAC210552FC	702Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
	CAS120M12BM2	968Kb/11P	1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 1, 2020-11-11
	PTFC270101M	933Kb/22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28
	PTRA087008NB	731Kb/11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Rev. 03.4, 2022-02-13
	PTRA094808NF	696Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz Rev. 05.2, 2022-01-04
	PTRA094858NF	1Mb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz Rev. 04, 2023-06-28
	PTVA030121EA	394Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Rev. 06, 2018-06-13

5-BIT ADJUSTABLE HIGH EFFICIENCY SYNCHRONOUS 데이터시트, PDF

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