DBC MODULE Datasheet(PDF) - 100T-K - Nell Semiconductor Co., Ltd

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DBC MODULE 데이터시트, PDF

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검색된 단어 : 'DBC MODULE ' - Total: 32491 (1/1625) Pages

제조업체	부품명	데이터시트	상세설명
Nell Semiconductor Co.,...	100T-K	704Kb/4P	DBC Module
Texas Instruments	LMX2492	1Mb/41P	-227 dBc/Hz Normalized PLL Noise
STMicroelectronics	STGIPS10K60A	458Kb/17P	IGBT intelligent power module (IPM) 10 A, 600 V, DBC isolated SDIP-25L molded
	STGIPL14K60	485Kb/21P	IGBT intelligent power module (IPM) 14 A, 600 V, DBC isolated SDIP-38L molded
	STGIPS14K60	578Kb/19P	IGBT intelligent power module (IPM) 12 A, 600 V, DBC isolated, SDIP-25L molded
	STGIPS20K60	695Kb/19P	IGBT intelligent power module (IPM) 17 A, 600 V, DBC isolated SDIP-25L molded
Toshiba Semiconductor	TIM3742-8SL-341	255Kb/4P	IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level
Analog Devices	HMC432	354Kb/6P	Ultra Low SSB Phase Noise: -148 dBc/Hz
Toshiba Semiconductor	TIM5964-80SL	164Kb/4P	IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
	TIM7179-60SL	160Kb/4P	IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
	TIM5964-60SL	158Kb/4P	IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
	TIM5359-80SL	46Kb/2P	IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
	TIM7785-60SL	156Kb/4P	IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
Advanced XTAL Products	AXIOM5151	134Kb/4P	OCXO with Ultra-Low Phase Noise Floor of -180 dBc/Hz
Toshiba Semiconductor	TIM3742-30SL	194Kb/4P	IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level
Pasternack Enterprises,...	PE1V31001	429Kb/5P	0.95 inch Commercial Connectorized Module Voltage Controlled Oscillator (VCO) From 25 MHz to 50 MHz With Phase Noise of -120 dBc/Hz
Pasternack Enterprises,...	PE1V31008	423Kb/5P	0.95 inch Commercial Connectorized Module Voltage Controlled Oscillator (VCO) From 100 MHz to 200 MHz With Phase Noise of -113 dBc/Hz
Crystek Corporation	CVPD-922	319Kb/2P	Ultra-Low Noise LVPECL VCXO with -162 dBc/Hz Noise Floor
Advanced XTAL Products	AXIOM5050ULN	115Kb/4P	OCXO with Ultra-Low Phase Noise Floor of -180 dBc/Hz
ON Semiconductor	NXH003P120M3F2PTNG	2Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC July, 2023 - Rev. 0

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