| 전자부품 데이터시트 검색엔진 |
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TYP 데이터시트, PDF |
| 검색된 단어 : 'TYP' - Total: 973 (10/49) Pages |
| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
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Maxim Integrated Produc... |
DS1343 | 1Mb/20P |
Low-Current SPI/3-Wire RTCs Low Timekeeping Current of 250nA (typ) Rev 0; 3/11 |
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ice Components, Ins. |
IN09027 | 35Kb/2P |
Isat is the current at which the inductance drops by 30% typ |
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Rohm |
2SC4115S_REVB | 165Kb/3P |
Low VCE(sat)., VCE(sat) = 0.2V(Typ.), 竊뉹C / IB = 2A / 0.1A竊 |
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RICOH electronics devic... |
R5326 | 988Kb/27P |
Supply Current (Low Power Mode) Typ. 5.5關A횞2 (VR1&VR2) (IOUT=0mA) |
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PREMIER DEVICES, INC. |
R0605400L | 129Kb/4P |
Si Reverse, low current, 5 - 65MHz, 40.3dB typ. Gain @ 65MHz, 160mA max. @ 24VDC |
| R1005300L | 130Kb/4P |
Si Reverse, low current, 5 - 100MHz, 30.8dB typ. Gain @ 100MHz, 140mA max. @ 24VDC | |
| R2005280L | 63Kb/4P |
Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC | |
| R3005300L | 130Kb/4P |
Si Reverse, low current, 5 - 300MHz, 30.0dB typ. Gain @ 300MHz, 160mA max. @ 24VDC | |
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STMicroelectronics |
STB45N65M5 | 1Mb/20P |
N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET |
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PREMIER DEVICES, INC. |
R1005250L | 129Kb/4P |
Si Reverse, low current, 5 - 100MHz, 25.4dB typ. Gain @ 100MHz, 140mA max. @ 24VDC |
| R2005300L | 129Kb/4P |
Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC | |
| R3005250L | 136Kb/4P |
Si Reverse, low current, 5 - 300MHz, 25.0dB typ. Gain @ 300MHz, 140mA max. @ 24VDC | |
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International Rectifier |
IRG4PC20UPBF | 693Kb/8P |
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A ) |
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Infineon Technologies A... |
BTS7930B | 815Kb/28P |
High Current PN Half Bridge NovalithIC 30 A, 10 m??+ 18 m??typ. Rev. 2.0, June 2006 |
| BTS7970B | 305Kb/28P |
High Current PN Half Bridge NovalithIC 68 A, 7 m??+ 9 m??typ. Rev. 2.0, 2006-05-09 |
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International Rectifier |
IRG4BH20K-LPBF | 298Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A ) |
| IRG4BC30FDPBF | 3Mb/11P |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) | |
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STMicroelectronics |
STL40C30H3LL | 1Mb/19P |
N-channel 30 V, 0.019 廓 typ., 10 A, P-channel 30 V, 0.024 廓 typ.,8 A STripFET??VI Power MOSFET in a PowerFLAT 5x6 d. i. package April 2014 Rev 5 |
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Fairchild Semiconductor |
FDPF16N50UT | 826Kb/9P |
R DS(on) = 370 m廓 ( Typ.) @ VGS = 10 V, ID = 7.5 A |
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Cree, Inc |
C450TR260-S3300 | 340Kb/6P |
Rectangular LED RF Performance Low Forward Voltage - 3.1 V typ at 20 mA |
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