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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TYP 데이터시트, PDF |
| 검색된 단어 : 'TYP' - Total: 973 (11/49) Pages |
| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 STMicroelectronics |
STF11NM65N | 
1Mb/21P |
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET |
| STF15N65M5 |
925Kb/17P |
N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET | |
 Assmann Electronics Inc... |
DK-330500-000-S |
286Kb/2P |
HDMI Adapter, Typ A Bu/Bu, komp. zu ehem. HDMI 1.3/1.4, sw |
 PREMIER DEVICES, INC. |
R0605300L |
135Kb/4P |
Si Reverse, low current, 5 - 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC |
| R0605300L1 |
135Kb/4P |
Si Reverse, low current, 5 - 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC | |
| R2005350L |
64Kb/4P |
Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC | |
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STMicroelectronics |
STF15N80K5 |
1Mb/22P |
N-channel 800 V, 0.3 ohm typ., 14 A SuperMESH 5 Power MOSFET |
 International Rectifier |
IRG4BC20U |
167Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
| IRG4BC40U |
169Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) | |
| IRG4PC40U |
148Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A) | |
| IRG4PC50F |
146Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) | |
| IRG4PH40U |
163Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) | |
 RICOH electronics devic... |
RD5RW |
268Kb/19P |
Supply Current Typ. 1.5uA (except pull-up/pull-down current for CE /CE pin) |
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PREMIER DEVICES, INC. |
R0605250L2 |
125Kb/4P |
Si Reverse, low current, 5 - 65 MHz, 25.0dB typ. Gain @ 65MHz, 140mA max. @ 24VDC |
| R0605250L1 |
129Kb/4P |
Si Reverse, low current, 5 - 65 MHz, 25.2dB typ. Gain @ 65MHz, 135mA max. @ 24VDC | |
| R0605300L2 |
125Kb/4P |
Si Reverse, low current, 5 - 65 MHz, 30.0dB typ. Gain @ 65MHz, 140mA max. @ 24VDC | |
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STMicroelectronics |
STH270N4F3-2 |
1,023Kb/19P |
N-channel 40 V, 1.4 m廓 typ., 180 A STripFET III Power MOSFET |
| STB25N80K5 |
1Mb/22P |
N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK | |
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International Rectifier |
IRG4BC20K |
138Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
| IRG4BC20W |
130Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
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