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MGFL45V1920A 데이터시트 (PDF) - Mitsubishi Electric Semiconductor
MGFL45V1920A Datasheet PDF - Mitsubishi Electric Semiconductor
부품명 MGFL45V1920A
다운로드  MGFL45V1920A 다운로드
파일 크기   50.57 Kbytes
페이지   1 Pages
제조업체  MITSUBISHI [Mitsubishi Electric Semiconductor]
홈페이지  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
상세설명 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET

MGFL45V1920A Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
MGFL45V1920A Datasheet PDF - Mitsubishi Electric Semiconductor

부품명 MGFL45V1920A
다운로드  MGFL45V1920A Click to download

파일 크기   50.57 Kbytes
페이지   1 Pages
제조업체  MITSUBISHI [Mitsubishi Electric Semiconductor]
홈페이지  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
상세설명 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET

MGFL45V1920A 데이터시트 (HTML) - Mitsubishi Electric Semiconductor


MGFL45V1920A 제품 세부 정보

DESCRIPTION
The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
    Class A operation
    Internally matched to 50(ohm) system
    High output power
        P1dB = 32W (TYP.) @ f=1.9 - 2.0 GHz
    High power gain
        GLP = 13 dB (TYP.) @ f=1.9 - 2.0GHz
    High power added efficiency
        P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHz
    Low distortion [item -51]
        IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION
    item 01 : 1.9 - 2.0 GHz band power amplifier
    item 51 : 1.9 - 2.0 GHz band digital radio communication




유사한 부품 번호 - MGFL45V1920A

제조업체부품명데이터시트상세설명
logo
Mitsubishi Electric Sem...		 MGFL45V1920A MITSUBISHI-MGFL45V1920A Datasheet
251Kb / 3P		 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFL45V1920A MITSUBISHI-MGFL45V1920A Datasheet
124Kb / 3P		 1.9-2.0 GHz BAND / 32W
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251Kb / 3P		 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFL45V1920A MITSUBISHI-MGFL45V1920A_11 Datasheet
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유사한 설명 - MGFL45V1920A

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