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MGFX36V0717 데이터시트 (PDF) - Mitsubishi Electric Semiconductor
MGFX36V0717 Datasheet PDF - Mitsubishi Electric Semiconductor
부품명 MGFX36V0717
다운로드  MGFX36V0717 다운로드
파일 크기   94.21 Kbytes
페이지   2 Pages
제조업체  MITSUBISHI [Mitsubishi Electric Semiconductor]
홈페이지  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
상세설명 10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET

MGFX36V0717 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
MGFX36V0717 Datasheet PDF - Mitsubishi Electric Semiconductor

부품명 MGFX36V0717
다운로드  MGFX36V0717 Click to download

파일 크기   94.21 Kbytes
페이지   2 Pages
제조업체  MITSUBISHI [Mitsubishi Electric Semiconductor]
홈페이지  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
상세설명 10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET

MGFX36V0717 데이터시트 (HTML) - Mitsubishi Electric Semiconductor


MGFX36V0717 제품 세부 정보

DESCRIPTION
The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
● Internally impedance matched
● High output power P1dB=4.0W (TYP.) @f=10.7 – 11.7GHz
● High linear power gain GLP=8.0dB (TYP.) @f=10.7 – 11.7GHz
● High power added efficiency P.A.E.=28% (TYP.) @f=10.7 – 11.7GHz

APPLICATION
● For use in 10.7 – 11.7 GHz band power amplifiers




유사한 부품 번호 - MGFX36V0717

제조업체부품명데이터시트상세설명
logo
Mitsubishi Electric Sem...		 MGFX36V0717 MITSUBISHI-MGFX36V0717 Datasheet
126Kb / 3P		 10.7-11.7 GHz BAND / 4W
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유사한 설명 - MGFX36V0717

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