Features and Benefits:
 Advanced MOSFETprocess technology
 Special designed for PWM, load switching and
generalpurpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature

Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistancewith
high repetitive avalanche rating. These features combine to make this design an extremely efficient andreliable
device for use in power switching application and a wide variety of other applications.