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AGR18090E 데이터시트 (PDF) - TriQuint Semiconductor

AGR18090E Datasheet PDF - TriQuint Semiconductor
부품명 AGR18090E
다운로드  AGR18090E 다운로드

파일 크기   356.18 Kbytes
페이지   9 Pages
제조업체  TRIQUINT [TriQuint Semiconductor]
홈페이지  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor
상세설명 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

AGR18090E Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
AGR18090E Datasheet PDF - TriQuint Semiconductor

부품명 AGR18090E
다운로드  AGR18090E Click to download

파일 크기   356.18 Kbytes
페이지   9 Pages
제조업체  TRIQUINT [TriQuint Semiconductor]
홈페이지  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor
상세설명 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

AGR18090E 데이터시트 (HTML) - TriQuint Semiconductor

AGR18090E Datasheet HTML 1Page - TriQuint Semiconductor AGR18090E Datasheet HTML 2Page - TriQuint Semiconductor AGR18090E Datasheet HTML 3Page - TriQuint Semiconductor AGR18090E Datasheet HTML 4Page - TriQuint Semiconductor AGR18090E Datasheet HTML 5Page - TriQuint Semiconductor AGR18090E Datasheet HTML 6Page - TriQuint Semiconductor AGR18090E Datasheet HTML 7Page - TriQuint Semiconductor AGR18090E Datasheet HTML 8Page - TriQuint Semiconductor AGR18090E Datasheet HTML 9Page - TriQuint Semiconductor

AGR18090E 제품 세부 정보

Introduction
The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industry-standard package and is capable of delivering a typical output power of 90 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications.

Features
   Typical performance ratings for GSM EDGE
   (f = 1.840 GHz, POUT = 30 W):
   — Modulation spectrum:
      @ ±400 kHz = –63 dBc.
      @ ±600 kHz = –73 dBc.
   — Error vector magnitude (EVM) = 1.7%.
   — Gain = 15 dB.
   — Drain Efficiency = 31%.
   Typical continuous wave (CW) performance over
      entire digital communication system (DCS) band:
   — P1dB: 90 W typ.
   — Power gain: @ P1dB = 14 dB.
   — Efficiency @ P1dB = 50% typ.
   — Return loss: –10 dB.
   High-reliability gold-metalization process.
   Low hot carrier injection (HCI) induced bias drift
      over 20 years.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   90 W minimum output power.
   Device can withstand 10:1 voltage standing wave
      ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW output power.
   Large signal impedance parameters available.




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