The RF Line
746–960 MHz RF LDMOS Wideband Integrated Power Amplifier

The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On–Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP–16 flat pack package that provides excellent thermal performance through a solderable backside contact.

• Typical CDMA Performance: 869–894 MHz, 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
   Driver Application
      Output Power — 23 dBm
      Power Gain — 31 dB
      Adjacent Channel Power Ratio —
         –60 dBc @ 750 kHz in a 30 kHz BW
         –66 dBc @ 1.98 MHz in a 30 kHz BW
   Output Application
      Output Power — 34 dBm
      PAE = 21%
      Adjacent Channel Power Ratio —
         –50 dBc @ 750 kHz in a 30 kHz BW
• Typical GSM Performance: 921–960 MHz, 26 Volts
   Output Power — 15 W P1dB
   Power Gain — 30 dB @ P1dB
   Drain Efficiency = 56% @ P1dB
• On–Chip Matching (50 Ohm Input, >9 Ohm Output)
• On–Chip Current Mirror gm Sensing FET for Self Bias Application
• Integrated Temperature Compensation Capability
• Usable for SCPA and MCPA Architecture
• Integrated ESD Protection
• Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.