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K7I161882B-FC16 데이터시트 (PDF) - Samsung semiconductor

K7I161882B-FC16 Datasheet PDF - Samsung semiconductor
부품명 K7I161882B-FC16
다운로드  K7I161882B-FC16 다운로드

파일 크기   378.53 Kbytes
페이지   17 Pages
제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
상세설명 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

K7I161882B-FC16 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
K7I161882B-FC16 Datasheet PDF - Samsung semiconductor

부품명 K7I161882B-FC16
다운로드  K7I161882B-FC16 Click to download

파일 크기   378.53 Kbytes
페이지   17 Pages
제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
상세설명 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

K7I161882B-FC16 데이터시트 (HTML) - Samsung semiconductor

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K7I161882B-FC16 제품 세부 정보

GENERAL DESCRIPTION
The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs.
They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B.

FEATURES
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future frequency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
• Pipelined, double-data rate operation.
• Common data input/output bus.
• HSTL I/O
• Full data coherency, providing most current data.
• Synchronous pipeline read with self timed late write.
• Registered address, control and data input/output.
• DDR(Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks(K and K) for accurate DDR timing at clock rising edges only.
• Two input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data traceability.
• Single address bus.
• Byte write (x18, x36) function.
• Simple depth expansion with no data contention.
• Programmable output impedance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array) with body size of 13mmx15mm. & Lead Free
• Operating in commercial and industrial temperature range.




유사한 부품 번호 - K7I161882B-FC16

제조업체부품명데이터시트상세설명
logo
Samsung semiconductor
K7I161882B SAMSUNG-K7I161882B Datasheet
416Kb / 18P
   512Kx36 & 1Mx18 DDRII CIO b2 SRAM
More results


유사한 설명 - K7I161882B-FC16

제조업체부품명데이터시트상세설명
logo
Samsung semiconductor
K7I163682B SAMSUNG-K7I163682B_06 Datasheet
416Kb / 18P
   512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7K1636T2C SAMSUNG-K7K1636T2C Datasheet
407Kb / 19P
   512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7K1636U2C SAMSUNG-K7K1636U2C Datasheet
600Kb / 19P
   512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7I163684B SAMSUNG-K7I163684B Datasheet
422Kb / 18P
   512Kx36 & 1Mx18 DDRII CIO b4 SRAM
K7Q163662B SAMSUNG-K7Q163662B Datasheet
337Kb / 17P
   512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161882 SAMSUNG-K7Q161882 Datasheet
503Kb / 17P
   512Kx36 & 1Mx18 QDR b2 SRAM
K7Q161862 SAMSUNG-K7Q161862 Datasheet
335Kb / 17P
   512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163652A SAMSUNG-K7Q163652A Datasheet
505Kb / 17P
   512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163654A SAMSUNG-K7Q163654A Datasheet
510Kb / 17P
   512Kx36-bit, 1Mx18-bit QDR SRAM
K7I323682M SAMSUNG-K7I323682M Datasheet
377Kb / 17P
   1Mx36 & 2Mx18 DDRII CIO b2 SRAM
More results



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