Description The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. • Low Profile (<0.7 mm) • Dual Sided Cooling Compatible • Ultra Low Package Inductance • Optimized for High Frequency Switching above 1MHz • Ideal for CPU Core DC-DC Converters • Optimized for SyncFET Socket of Sync. Buck Converter • Low Conduction Losses • Compatible with Existing Surface Mount Techniques
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