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GS820E32Q-117 데이터시트 (PDF) - List of Unclassifed Manufacturers

GS820E32Q-117 Datasheet PDF - List of Unclassifed Manufacturers
부품명 GS820E32Q-117
다운로드  GS820E32Q-117 다운로드

파일 크기   345.07 Kbytes
페이지   23 Pages
제조업체  ETC1 [List of Unclassifed Manufacturers]
홈페이지  
Logo ETC1 - List of Unclassifed Manufacturers
상세설명 2M Synchronous Burst SRAM

GS820E32Q-117 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
GS820E32Q-117 Datasheet PDF - List of Unclassifed Manufacturers

부품명 GS820E32Q-117
다운로드  GS820E32Q-117 Click to download

파일 크기   345.07 Kbytes
페이지   23 Pages
제조업체  ETC1 [List of Unclassifed Manufacturers]
홈페이지  
Logo ETC1 - List of Unclassifed Manufacturers
상세설명 2M Synchronous Burst SRAM

GS820E32Q-117 데이터시트 (HTML) - List of Unclassifed Manufacturers

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GS820E32Q-117 제품 세부 정보

[GSI]

Functional Description
Applications
The GS820E32 is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.

Features
• FT pin for user configurable flow through or pipelined operation.
• Dual Cycle Deselect (DCD) Operation.
• 3.3V +10%/-5% Core power supply
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins.
• Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• JEDEC standard 100-lead TQFP or QFP package.




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유사한 설명 - GS820E32Q-117

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