제조업체 | 부품명 | 데이터시트 | 상세설명 |
GSI Technology |
GS72116ATP
|
505Kb / 18P |
128K x 16 2Mb Asynchronous SRAM
|
Samsung semiconductor |
K6F2016R4G
|
163Kb / 10P |
2Mb(128K x 16 bit) Low Power SRAM
|
K6F2016U4G
|
160Kb / 10P |
2Mb(128K x 16 bit) Low Power SRAM
|
List of Unclassifed Man... |
GS72108ATP
|
317Kb / 12P |
256K x 8 2Mb Asynchronous SRAM
|
NanoAmp Solutions, Inc. |
N02L163WC2A
|
264Kb / 11P |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit
|
GSI Technology |
GS72108TP-10
|
364Kb / 12P |
256K x 8 2Mb Asynchronous SRAM
|
ON Semiconductor |
N02L63W2A
|
659Kb / 11P |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit
July 2008 - Rev. 9 |
GSI Technology |
GS71108TP
|
271Kb / 14P |
128K x 8 1Mb Asynchronous SRAM
|
List of Unclassifed Man... |
GS71108ATP
|
641Kb / 16P |
128K x 8 1Mb Asynchronous SRAM
|
GSI Technology |
GS71208TP
|
382Kb / 11P |
128K x 8 1Mb Asynchronous SRAM
|