제조업체 | 부품명 | 데이터시트 | 상세설명 |
GSI Technology |
GS8150V18AB
|
797Kb / 25P |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
|
Cypress Semiconductor |
CY7C1330AV25
|
397Kb / 19P |
18-Mbit (512K x 36/1Mbit x 18) Pipelined Register-Register Late Write
|
GSI Technology |
GS8161E18BT
|
1Mb / 35P |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
|
GS8161E18BT-V
|
1Mb / 35P |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
|
Cypress Semiconductor |
CY7C1380CV25
|
519Kb / 33P |
512K x 36/1M x 18 Pipelined SRAM
|
CY7C1380B
|
841Kb / 34P |
512K x 36/1M x 18 Pipelined SRAM
|
GSI Technology |
GS8160E18T
|
622Kb / 25P |
1M x 18, 512K x 36 18Mb Sync Burst SRAMs
|
GS816018BT
|
925Kb / 24P |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GS8160F18T
|
544Kb / 22P |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GS8160E18BT-V
|
926Kb / 23P |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|