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AM29DL800BT120EE 데이터시트 (PDF) - Advanced Micro Devices

AM29DL800BT120EE Datasheet PDF - Advanced Micro Devices
부품명 AM29DL800BT120EE
다운로드  AM29DL800BT120EE 다운로드

파일 크기   1381.96 Kbytes
페이지   46 Pages
제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices
상세설명 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL800BT120EE Datasheet (PDF)

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AM29DL800BT120EE Datasheet PDF - Advanced Micro Devices

부품명 AM29DL800BT120EE
다운로드  AM29DL800BT120EE Click to download

파일 크기   1381.96 Kbytes
페이지   46 Pages
제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices
상세설명 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL800BT120EE 데이터시트 (HTML) - Advanced Micro Devices

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AM29DL800BT120EE 제품 세부 정보

GENERAL DESCRIPTION
The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Simultaneous Read/Write operations
    — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
    — Zero latency between read and write operations
    — Read-while-erase
    — Read-while-program
■ Single power supply operation
    — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
■ Manufactured on 0.35 µm process technology
    — Compatible with 0.5 µm Am29DL800 device
■ High performance
    — Access times as fast as 70 ns
■ Low current consumption (typical values at 5 MHz)
    — 7 mA active read current
    — 21 mA active read-while-program or read-whileerase current
    — 17 mA active program-while-erase-suspended current
    — 200 nA in standby mode
    — 200 nA in automatic sleep mode
    — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode
■ Flexible sector architecture
    — Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode
    — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode
    — Any combination of sectors can be erased
    — Supports full chip erase
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Sector protection
    — Hardware method of locking a sector to prevent any program or erase operation within that sector
    — Sectors can be locked in-system or via programming equipment
    — Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip
    — Embedded Program algorithm automatically programs and verifies data at specified address
■ Minimum 1,000,000 program/erase cycles guaranteed per sector
■ Package options
    — 44-pin SO
    — 48-pin TSOP
    — 48-ball FBGA
■ Compatible with JEDEC standards
    — Pinout and software compatible with single-power-supply flash standard
    — Superior inadvertent write protection
■ Data# Polling and Toggle Bits
    — Provides a software method of detecting program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
    — Hardware method for detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends or resumes erasing sectors to allow reading and programming in other sectors
    — No need to suspend if sector is in the other bank
■ Hardware reset pin (RESET#)
    — Hardware method of resetting the device to reading array data




유사한 부품 번호 - AM29DL800BT120EE

제조업체부품명데이터시트상세설명
logo
Advanced Micro Devices
AM29DL800BT120EE AMD-AM29DL800BT120EE Datasheet
580Kb / 43P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BT120EEB AMD-AM29DL800BT120EEB Datasheet
580Kb / 43P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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유사한 설명 - AM29DL800BT120EE

제조업체부품명데이터시트상세설명
logo
Advanced Micro Devices
AM29DL800B AMD-AM29DL800B Datasheet
580Kb / 43P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400B AMD-AM29DL400B Datasheet
534Kb / 42P
   4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400B AMD-AM29DL400B_05 Datasheet
1Mb / 47P
   4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL16XD AMD-AM29DL16XD_06 Datasheet
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   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL16XD AMD-AM29DL16XD Datasheet
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AM29DL16XC AMD-AM29DL16XC Datasheet
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SPANSION
S29AL008D SPANSION-S29AL008D_06 Datasheet
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   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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Advanced Micro Devices
AM29LV800B AMD-AM29LV800B_05 Datasheet
1Mb / 49P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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SPANSION
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   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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AM29LV800B AMD-AM29LV800B Datasheet
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   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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Advanced Micro Devices 에 대하여


Advanced Micro Devices, Inc. (AMD)는 캘리포니아 산타 클라라에 본사를 둔 미국 다국적 반도체 회사입니다.
소비자, 상업 및 전문 시장을위한 마이크로 프로세서, 그래픽 프로세서 및 컴퓨터 시스템의 주요 생산 업체입니다.
AMD는 Ryzen 및 Epyc 프로세서 라인 및 Radeon 그래픽 제품을 포함한 경쟁력있는 CPU 제품으로 유명합니다.
1969 년에 설립 된 AMD는 기술 산업에서 오랜 역사를 가지고 있으며 PC 및 서버 시장에서 주요 업체였습니다.
최근 몇 년 동안 회사는 데이터 센터, 게임 및 인공 지능의 컴퓨팅 전력에 대한 수요 증가를 해결하기 위해 제품 오퍼링을 확장했습니다.
AMD는 혁신 및 고급 기술에 중점을두고 전 세계 고객에게 고성능 컴퓨팅 솔루션을 제공하는 것을 목표로합니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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