Features
● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process
● Cathode is electrically connected to the case
● High reliability
● Wide beam
● Same package as BP 103, BPX 63, SFH 464, SFH 483
● DIN humidity category in acc. with DIN 40 040 GQG
 
Applications
● IR remote control and sound transmission
● Photointerrupters