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TH58NVG5S0FTA20 데이터시트 (PDF) - Toshiba Semiconductor

TH58NVG5S0FTA20 Datasheet PDF - Toshiba Semiconductor
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페이지   73 Pages
제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
상세설명 32 GBIT (4G 횞 8 BIT) CMOS NAND E2PROM

TH58NVG5S0FTA20 Datasheet (PDF)

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TH58NVG5S0FTA20 Datasheet PDF - Toshiba Semiconductor

부품명 TH58NVG5S0FTA20
다운로드  TH58NVG5S0FTA20 Click to download

파일 크기   677.82 Kbytes
페이지   73 Pages
제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
상세설명 32 GBIT (4G 횞 8 BIT) CMOS NAND E2PROM

TH58NVG5S0FTA20 데이터시트 (HTML) - Toshiba Semiconductor

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TH58NVG5S0FTA20 제품 세부 정보

32 GBIT (4G × 8 BIT) CMOS NAND E2PROM



DESCRIPTION

The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages).

The TH58NVG5S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.



FEATURES

• Organization

   x8

   Memory cell array 4328 × 256K × 8 × 4

   Register 4328 × 8

   Page size 4328 bytes

   Block size (256K + 14.5K) bytes

• Modes

   Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

   Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

• Mode control

   Serial input/output

   Command control

• Number of valid blocks

   Min 16064 blocks

   Max 16384 blocks

• Power supply

   VCC = 2.7V to 3.6V

• Access time

   Cell array to register 30 µs max

   Serial Read Cycle 25 ns min (CL=100pF)

• Program/Erase time

   Auto Page Program 300 µs/page typ.

   Auto Block Erase 3 ms/block typ.

• Operating current

   Read (25 ns cycle) 30 mA max.

   Program (avg.) 30 mA max

   Erase (avg.) 30 mA max

   Standby 200 µA max

• Package

   TSOP I 48-P-1220-0.50C

• 4bit ECC for each 512Byte is required.



 




유사한 부품 번호 - TH58NVG5S0FTA20

제조업체부품명데이터시트상세설명
logo
Toshiba Semiconductor
TH58NVG5S0FTA20 TOSHIBA-TH58NVG5S0FTA20 Datasheet
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TH58NVG5S0FTA20 TOSHIBA-TH58NVG5S0FTA20 Datasheet
2Mb / 20P
   Flash Memory
Mar. 2016
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