제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
GT30J324
|
166Kb / 7P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT40T301
|
311Kb / 6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT60N321
|
173Kb / 6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT60M303
|
426Kb / 6P |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
GT40T302
|
173Kb / 6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT8G132
|
338Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT60M323
|
193Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT20J101
|
259Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT15M321
|
269Kb / 6P |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
GT60M322
|
191Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|