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2N5794UTX 데이터시트(PDF) 2 Page - TT Electronics. |
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2N5794UTX 데이터시트(HTML) 2 Page - TT Electronics. |
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2 / 3 page ![]() © TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Surface Mount Dual NPN Transistor 2N5794U (TX, TXV) Issue C 08/2016 Page 2 OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Collector‐Emi er Voltage 45 V Collector‐Base Voltage 75 V Emi er‐Base Voltage 6 V Collector Current‐Con nuous 600 mA Opera ng Junc on Temperature (TJ) ‐65° C to +200 °C Storage Junc on Temperature (Tstg) ‐65° C to +200° C Power Dissipa on @ TA = 25°C 0.5 W Power Dissipa on @ Tc = 25° C 0.6 W (1) Soldering Temperature (vapor phase reflow for 30 seconds) 215° C Soldering Temperature (heated collet for 5 seconds) 260° C Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS OFF CHARACTERISTICS V(BR)CEO Collector‐Emi er Breakdown Voltage 40 ‐ V IC = 10 mA (1) ICBO1 Collector‐Base Cutoff Current 10 µA VCB = 75 V ICBO2 Collector‐Base Cutoff Current 10 nA VCB = 50 V ICBO3 Collector‐Base Cutoff Current 10 µA VBC = 50 V, TA = 150° C IEBO1 Emi er‐Base Breakdown Voltage 10 V VEB = 6 V IEBO2 Emi er‐Base Cutoff Current 10 nA VEB = 4 V hFE1 35 ‐ VCE = 10 V, IC = 0.1 mA hFE2 50 ‐ VCE = 10 V, IC = 1.0 mA hFE3 75 ‐ VCE = 10 V, IC = 10 mA (1) hFE4 100 300 ‐ VCE = 10 V, IC = 150 mA (1) hFE5 40 ‐ VCE = 10 V, IC = 300 mA (1) hFE6 50 ‐ VCE = 1.0 V, IC = 150 mA (1) hFE7 40 ‐ VCE = 10 V, IC = 150 mA, TA = ‐55° C (1) Forward‐Current Transfer Ra o Note: 1. Pulsed Test: Pulse Width = 300 µs ± 50, 1‐2 % Duty Cycle |
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