ST25DV64K datasheet(179/220 Pages) STMICROELECTRONICS

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ST25DV04K ST25DV16K ST25DV64K

Device parameters

219

Figure 76 indicates how the value of the pull-up resistor can be calculated. In most

applications, though, this method of synchronization is not employed, and so the pull-up

resistor is not necessary, provided that the bus master has a push-pull (rather than open

drain) output.

Figure 76. I2C Fast mode (fC = 1 MHz): maximum Rbus value versus bus parasitic

capacitance (Cbus)

9.3

GPO Characteristics

This section summarizes the operating and measurement conditions of the GPO feature.

The parameters in the DC and AC characteristic tables that follow are derived from tests

performed under the measurement conditions summarized in the relevant tables.

Table 211. GPO DC characteristics up to 85°C

Symbol

Parameter

Condition

Min

Typ Max Unit

VOL_GPO_CMOS

Output low voltage

(GPO CMOS)

VDCG = 1.8 V, IOL = 0.5 mA

0.4

VDCG = 3.3 V, IOL = 0.5 mA

0.4

VDCG = 5.5 V, IOL = 0.5 mA

0.4

VOH_GPO_CMOS

Output high voltage

(GPO CMOS)

VDCG = 1.8 V, IOH = - 0.5 mA VDCG - 0.4

VDCG = 3.3 V, IOH = - 0.5 mA VDCG - 0.4

VDCG = 5.5 V, IOH = - 0.5 mA VDCG - 0.4

VOL_GPO_OD

Output low voltage

(GPO open drain)

IOL = 1 mA, VCC = 1.8 V

0.28 0.4

IOL = 1 mA, VCC = 3.3 V

0.20 0.4

IOL = 1 mA, VCC = 5.5 V

0.20 0.4

IL_GPO_OD

Output leakage

(GPO open drain)

GPO in Hi-Z, external

voltage applied on:

GPO, VSS or VCC

- 0.15

0.06 0.15 µA

ILI_VDGC

Input leakage (VDGC)VDGC = 5.5 V

0.1

µA

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