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BB173 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BB173 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page BB173 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 — 25 March 2013 2 of 8 NXP Semiconductors BB173 VHF variable capacitance diode 4. Marking 5. Limiting values 6. Characteristics [1] See Figure 2. [2] See Figure 1 and Figure 3. Table 3. Marking Type number Marking code BB173 CE Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 32 V peak value in series with a 10 k resistor - 35 V IF forward current - 20 mA Tstg storage temperature 55 +150 C Tj junction temperature 55 +125 C Table 5. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IR reverse current VR =30V [1] -- 10 nA VR =30V; Tj =85 C [1] -- 200 nA rs diode series resistance f = 100 MHz; Cd = 30 pF - 0.65 0.8 Cd diode capacitance f = 1 MHz [2] VR = 1 V 34.65 - 42.35 pF VR = 28 V 2.361 2.6 2.754 pF Cd(1V)/Cd(2V) diode capacitance ratio (1 Vto2V) f= 1MHz - 1.3 - Cd(1V)/Cd(28V) diode capacitance ratio (1 Vto28V) f= 1MHz 13.5 15 - Cd(25V)/Cd(28V) diode capacitance ratio (25 V to 28 V) f= 1MHz - 1.08 - |
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