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2SC5140 데이터시트(PDF) 2 Page - Hitachi Semiconductor |
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2SC5140 데이터시트(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SC5140 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 9V Emitter to base voltage V EBO 1.5 V Collector current I C 20 mA Collector power dissipation P C 80 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current I CBO —— 10 µAV CB = 15 V, IE = 0 I CEO —— 1 mA V CE = 9 V, RBE = ∞ Emitter cutoff current I EBO —— 10 µAV EB = 1.5 V, IC = 0 DC current transfer ratio h FE 50 120 250 V CE = 5 V, IC = 10 mA Collector output capacitance Cob — 0.5 0.85 pF V CB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product f T 6 9 — GHz V CE = 5 V, IC = 10 mA Power gain PG 11 15 — dB V CE = 5 V, IC = 10 mA, f = 900 MHz Noise figure NF — 1.6 2.5 dB V CE = 5 V, IC = 5 mA, f = 900 MHz |
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