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PIC18F4520E/MLQTP 데이터시트(PDF) 325 Page - Microchip Technology |
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PIC18F4520E/MLQTP 데이터시트(HTML) 325 Page - Microchip Technology |
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325 / 390 page ![]() 2004 Microchip Technology Inc. Preliminary DS39631A-page 323 PIC18F2420/2520/4420/4520 26.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (†) Ambient temperature under bias............................................................................................................ .-40°C to +125°C Storage temperature .............................................................................................................................. -65°C to +150°C Voltage on any pin with respect to VSS (except VDD, MCLR and RA4) .......................................... -0.3V to (VDD + 0.3V) Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +7.5V Voltage on MCLR with respect to VSS (Note 2) ......................................................................................... 0V to +13.25V Total power dissipation (Note 1) ............................................................................................................................... 1.0W Maximum current out of VSS pin ........................................................................................................................... 300 mA Maximum current into VDD pin .............................................................................................................................. 250 mA Input clamp current, IIK (VI < 0 or VI > VDD) ...................................................................................................................... ±20 mA Output clamp current, IOK (VO < 0 or VO > VDD) .............................................................................................................. ±20 mA Maximum output current sunk by any I/O pin..........................................................................................................25 mA Maximum output current sourced by any I/O pin .................................................................................................... 25 mA Maximum current sunk by all ports .......................................................................................................................200 mA Maximum current sourced by all ports .................................................................................................................. 200 mA Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL) 2: Voltage spikes below VSS at the MCLR/VPP/RE3 pin, inducing currents greater than 80 mA, may cause latch-up. Thus, a series resistor of 50-100 Ω should be used when applying a “low” level to the MCLR/VPP/ RE3 pin, rather than pulling this pin directly to VSS. † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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