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LJXX06XX 데이터시트(PDF) 2 Page - Littelfuse

부품명 LJXX06XX
상세설명  6 Amp High Temp Sensitive & Alternistor (High Commutation) Triacs
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©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
6 Amp High Temp Sensitive & Alternistor (High Commutation) Triacs
Thyristors
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Symbol
Parameter
Value
Unit
V
DSM/VRSM
Peak non-repetitive blocking voltage
PW=100 μs
700
V
I
T(RMS)
RMS on-state current (full sine wave)
QJxx06VHy/QJxx06DHy
T
C = 130°C
6
A
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
QJxx06VHy
QJxx06DHy
60
A
f = 60 Hz
t = 16.7 ms
QJxx06VHy
QJxx06DHy
72
I2t
I2t Value for fusing
t
p = 8.3 ms
QJxx06VHy
QJxx06DHy
21.5
A2s
di/dt
Critical rate of rise of on-state current
f = 60 Hz
T
J = 150°C
70
A/μs
I
GTM
Peak gate trigger current
t
p=20μs
T
J = 150°C
4
A
P
G(AV)
Average gate power dissipation
T
J = 150°C
0.3
W
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 150
°C
Note: xx=voltage/10, y = sensitivity
Electrical Characteristics (T
J = 25°C, unless otherwise specified) — Sensitive Triac (4 Quadrants)
Symbol
Test Conditions
Quadrant
Value
Unit
LJxx06x8
I
GT
V
D = 12V RL = 60 Ω
I – II – III
IV
MAX.
10
20
mA
V
GT
ALL
MAX.
1.2
V
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 150°C
ALL
MIN.
0.15
V
I
H
I
T = 100mA
MAX.
25
mA
dv/dt
V
D = VDRM Gate Open TJ = 150°C
400V
TYP.
80
V/μs
600V
50
(dv/dt)c
(di/dt)c = 3.2 A/ms T
J = 150°C
TYP.
2
V/μs
t
gt
I
G = 2 x IGT PW = 15µs IT = 8.5 A(pk)
TYP.
12
μs
Note: xx=voltage/10, x = package
Electrical Characteristics (T
J = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants)
Symbol
Test Conditions
Quadrant
Value
Unit
QJxx06xH2
QJxx06xH3
QJxx06xH4
I
GT
V
D = 12V RL = 60 Ω
I – II – III
MAX.
10
20
35
mA
V
GT
I – II – III
MAX.
1.3
V
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 150°C
I – II – III
MIN.
0.15
V
I
H
I
T = 100mA
MAX.
25
30
35
mA
dv/dt
V
D = VDRM Gate Open TJ = 150°C
QJxx06VHY/
QJxx06DHy
MIN.
400V
150
250
350
V/μs
600V
100
200
250
(dv/dt)c
(di/dt)c = 3.2 A/ms T
J = 150°C
MIN.
15
18
20
V/μs
t
gt
I
G = 2 x IGT PW = 15µs IT = 8.5 A(pk)
TYP.
10
10
10
μs
Note: xx=voltage/10, x = package


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