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LJXX06XX 데이터시트(PDF) 2 Page - Littelfuse |
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LJXX06XX 데이터시트(HTML) 2 Page - Littelfuse |
2 / 8 page ©2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 06/04/19 6 Amp High Temp Sensitive & Alternistor (High Commutation) Triacs Thyristors Absolute Maximum Ratings — Alternistor Triac (3 Quadrants) Symbol Parameter Value Unit V DSM/VRSM Peak non-repetitive blocking voltage PW=100 μs 700 V I T(RMS) RMS on-state current (full sine wave) QJxx06VHy/QJxx06DHy T C = 130°C 6 A I TSM Non repetitive surge peak on-state current (full cycle, T J initial = 25°C) f = 50 Hz t = 20 ms QJxx06VHy QJxx06DHy 60 A f = 60 Hz t = 16.7 ms QJxx06VHy QJxx06DHy 72 I2t I2t Value for fusing t p = 8.3 ms QJxx06VHy QJxx06DHy 21.5 A2s di/dt Critical rate of rise of on-state current f = 60 Hz T J = 150°C 70 A/μs I GTM Peak gate trigger current t p=20μs T J = 150°C 4 A P G(AV) Average gate power dissipation T J = 150°C 0.3 W T stg Storage temperature range -40 to 150 °C T J Operating junction temperature range -40 to 150 °C Note: xx=voltage/10, y = sensitivity Electrical Characteristics (T J = 25°C, unless otherwise specified) — Sensitive Triac (4 Quadrants) Symbol Test Conditions Quadrant Value Unit LJxx06x8 I GT V D = 12V RL = 60 Ω I – II – III IV MAX. 10 20 mA V GT ALL MAX. 1.2 V V GD V D = VDRM RL = 3.3 kΩ TJ = 150°C ALL MIN. 0.15 V I H I T = 100mA MAX. 25 mA dv/dt V D = VDRM Gate Open TJ = 150°C 400V TYP. 80 V/μs 600V 50 (dv/dt)c (di/dt)c = 3.2 A/ms T J = 150°C TYP. 2 V/μs t gt I G = 2 x IGT PW = 15µs IT = 8.5 A(pk) TYP. 12 μs Note: xx=voltage/10, x = package Electrical Characteristics (T J = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants) Symbol Test Conditions Quadrant Value Unit QJxx06xH2 QJxx06xH3 QJxx06xH4 I GT V D = 12V RL = 60 Ω I – II – III MAX. 10 20 35 mA V GT I – II – III MAX. 1.3 V V GD V D = VDRM RL = 3.3 kΩ TJ = 150°C I – II – III MIN. 0.15 V I H I T = 100mA MAX. 25 30 35 mA dv/dt V D = VDRM Gate Open TJ = 150°C QJxx06VHY/ QJxx06DHy MIN. 400V 150 250 350 V/μs 600V 100 200 250 (dv/dt)c (di/dt)c = 3.2 A/ms T J = 150°C MIN. 15 18 20 V/μs t gt I G = 2 x IGT PW = 15µs IT = 8.5 A(pk) TYP. 10 10 10 μs Note: xx=voltage/10, x = package |
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