1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Darlington Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

MPSA75

MPSA77

Unit

Collector – Emitter Voltage

VCES

–40

–60

Vdc

Emitter – Base Voltage

VEBO

–10

Vdc

Collector Current — Continuous

IC

–500

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

MPSA75

(IC = –100 µAdc, VBE = 0)

MPSA77

V(BR)CES

–40

–60

—

—

—

—

Vdc

Collector – Base Breakdown Voltage

MPSA75

(IC = 100 mAdc, IE = 0)

MPSA77

V(BR)CBO

–40

–60

—

—

—

—

Vdc

Collector Cutoff Current

(VCB= –30 V, IE = 0)

MPSA75

(VCB = –50 V, IE = 0)

MPSA77

ICBO

—

—

—

—

–100

–100

nAdc

Collector Cutoff Current

(VCE = –30 V, VBE = 0)

MPSA75

(VCE = –50 V, VBE = 0)

MPSA77

ICES

—

—

—

—

–500

–500

nAdc

Emitter Cutoff Current (VEB = –10 Vdc)

IEBO

—

—

–100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = –10 mA, VCE = –5.0 V)

(IC = –100 mA, VCE = –5.0 V)

hFE

10,000

10,000

—

—

—

—

—

Collector – Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc)

VCE(sat)

—

—

–1.5

Vdc

Base – Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc)

VBE

—

—

–2.0

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)

|hfe|

1.25

2.4

—

—

Order this document

by MPSA75/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPSA75

MPSA77

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

COLLECTOR 3

BASE

2

EMITTER 1