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RA4M1 데이터시트(PDF) 104 Page - Renesas Technology Corp

부품명 RA4M1
상세설명  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M1 데이터시트(HTML) 104 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 104 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
2.10
VBATT Characteristics
Note:
The VCC-off period for starting power supply switching indicates the period in which VCC is below the minimum value of the
voltage level for switching to battery backup (VDETBATT).
Figure 2.78
Power supply switching and LVD0 reset timing
Table 2.58
Battery backup function characteristics
Conditions: VCC = AVCC0 = 1.6V to 5.5V, VBATT = 1.6 to 3.6 V
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Voltage level for switching to battery backup (falling)
VDETBATT
1.99
2.09
2.19
V
Figure 2.78,
Figure 2.79
Hysteresis width for switching to battery back up
VVBATTH
-
100
-
mV
VCC-off period for starting power supply switching
tVOFFBATT
300
-
-
μs
-
Voltage detection level
VBATT_Power-on reset (VBATT_POR)
VVBATPOR
1.30
1.40
1.50
V
Figure 2.78,
Figure 2.79
Wait time after VBATT_POR reset time cancellation
tVBATPOR
-
-
3
mS
-
Level for detection of voltage drop on
the VBATT pin (falling)
VBTLVDLVL[1:0] = 10b VDETBATLVD
2.11
2.2
2.29
V
Figure 2.80
VBTLVDLVL[1:0] = 11b
1.92
2
2.08
V
Hysteresis width for VBATT pin LVD
VVBATLVDTH
-
50
-
mV
VBATT pin LVD operation stabilization time
td_vbat
-
-
300
μs
Figure 2.80
VBATT pin LVD response delay time
tdet_vbat
-
-
350
μs
Allowable voltage change rising/falling gradient
dt/dVCC
1.0
-
-
ms/V
-
VCC voltage level for access to the VBATT backup registers
V_BKBATT
1.8
-
-
V
-
VDETBATT
VVBATH
VCC supplied
VBATT
VCC
VVBATPOR
VBATT supplied
VCC supplied
Backup power area
Internal reset signal
(active-low)
tLVD0
Vdet0
VLVH
tdet
tdet
VPOR



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