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RA4M1 데이터시트(PDF) 111 Page - Renesas Technology Corp

부품명 RA4M1
상세설명  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M1 데이터시트(HTML) 111 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 111 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
2.14
OPAMP Characteristics
Note 1.
When the operational amplifier reference current circuit is activated in advance.
Table 2.68
OPAMP characteristics
Conditions: VCC = AVCC0 = 1.8 to 5.5 V (AVCC0 = VCC when VCC < 2.0 V)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Common mode input
range
Vicm1
Low power mode
0.2
-
AVCC0 - 0.5
V
Vicm2
High-speed mode
0.3
-
AVCC0 - 0.6
V
Output voltage range
Vo1
Low power mode
0.1
-
AVCC0 - 0.1
V
Vo2
High-speed mode
0.1
-
AVCC0 - 0.1
V
Input offset voltage
Vioff
3σ
-10
-
10
mV
Open gain
Av
60
120
-
dB
Gain-bandwidth (GB)
product
GBW1
Low power mode
-
0.04
-
MHz
GBW2
High-speed mode
-
1.7
-
MHz
Phase margin
PM
CL = 20 pF
50
-
-
deg
Gain margin
GM
CL = 20 pF
10
-
-
dB
Equivalent input noise
Vnoise1
f = 1 kHz
Low power mode
-
230
-
nV/√Hz
Vnoise2
f = 10 kHz
-
200
-
nV/√Hz
Vnoise3
f = 1 kHz
High-speed mode
-
90
-
nV/√Hz
Vnoise4
f = 2 kHz
-
70
-
nV/√Hz
Power supply
reduction ratio
PSRR
-90
-
dB
Common mode signal
reduction ratio
CMRR
-
90
-
dB
Stabilization wait time
Tstd1
CL = 20 pF
Only operational amplifier is
activated *1
Low power mode
650
-
-
μs
Tstd2
High-speed mode
13
-
-
μs
Tstd3
CL = 20 pF
Operational amplifier and
reference current circuit are
activated simultaneously
Low power mode
650
-
-
μs
Tstd4
High-speed mode
13
-
-
μs
Settling time
Tset1
CL = 20 pF
Low power mode
-
-
750
μs
Tset2
High-speed mode
-
-
13
μs
Slew rate
Tslew1
CL = 20 pF
Low power mode
-
0.02
-
V/μs
Tslew2
High-speed mode
-
1.1
-
V/μs
Load current
Iload1
Low-power mode
-100
-
100
μA
Iload2
High-speed mode
-100
-
100
μA
Load capacitance
CL
--20
pF



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